Micro-photoluminescence mapping of surface plasmon enhanced light emissions from InGaN/GaN quantum wells

Kazutaka Tateishi; Pangpang Wang; Sou Ryuzaki; Mitsuru Funato; Yoichi Kawakami; Koichi Okamoto; Kaoru Tamada

doi:10.1063/1.4998798

Micro-photoluminescence mapping of surface plasmon enhanced light emissions from InGaN/GaN quantum wells

Kazutaka Tateishi, Pangpang Wang, Sou Ryuzaki, Mitsuru Funato, Yoichi Kawakami, Koichi Okamoto, Kaoru Tamada

Department of Fundamental Organic Chemistry

Research output: Contribution to journal › Article › peer-review

10 Citations (Scopus)

Abstract

We conducted photoluminescence (PL) mapping to elucidate the detailed mechanism of PL enhancement based on the energy transfer from excitons to surface plasmon polaritons (SPPs) in silver-coated InGaN quantum wells (QWs). The PL mapping for bare InGaN QWs showed positive or negative correlations between the PL peak intensity and wavelength. These correlations are normally caused by exciton localization and the quantum confined Stark effect, respectively; however, they did not appear in the silver-coated region of the InGaN QWs, and the wavelength distribution shifted into shorter wavelengths due to the SP-induced PL enhancement. These results suggest that the energy transfer from the excitons to the SPPs should be much faster than that in the exciton localization and charge screening processes of the piezoelectric field in QWs.

Original language	English
Article number	172105
Journal	Applied Physics Letters
Volume	111
Issue number	17
DOIs	https://doi.org/10.1063/1.4998798
Publication status	Published - Oct 23 2017

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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@article{351bc656bc7f4855a69a05f949cf7167,

title = "Micro-photoluminescence mapping of surface plasmon enhanced light emissions from InGaN/GaN quantum wells",

abstract = "We conducted photoluminescence (PL) mapping to elucidate the detailed mechanism of PL enhancement based on the energy transfer from excitons to surface plasmon polaritons (SPPs) in silver-coated InGaN quantum wells (QWs). The PL mapping for bare InGaN QWs showed positive or negative correlations between the PL peak intensity and wavelength. These correlations are normally caused by exciton localization and the quantum confined Stark effect, respectively; however, they did not appear in the silver-coated region of the InGaN QWs, and the wavelength distribution shifted into shorter wavelengths due to the SP-induced PL enhancement. These results suggest that the energy transfer from the excitons to the SPPs should be much faster than that in the exciton localization and charge screening processes of the piezoelectric field in QWs.",

author = "Kazutaka Tateishi and Pangpang Wang and Sou Ryuzaki and Mitsuru Funato and Yoichi Kawakami and Koichi Okamoto and Kaoru Tamada",

note = "Funding Information: This work was supported by Grants-in-Aid for Scientific Research of Types B (26289109) and S (15H05732). This work was also partially supported by the Precursory Research for Embryonic Science and Technology (PRESTO) program of the Japan Science and Technology Agency (JST) and the Cooperative Research Program of the “Network Joint Research Center for Materials and Devices.”",

year = "2017",

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doi = "10.1063/1.4998798",

language = "English",

volume = "111",

journal = "Applied Physics Letters",

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T1 - Micro-photoluminescence mapping of surface plasmon enhanced light emissions from InGaN/GaN quantum wells

AU - Tateishi, Kazutaka

AU - Wang, Pangpang

AU - Ryuzaki, Sou

AU - Funato, Mitsuru

AU - Kawakami, Yoichi

AU - Okamoto, Koichi

AU - Tamada, Kaoru

N1 - Funding Information: This work was supported by Grants-in-Aid for Scientific Research of Types B (26289109) and S (15H05732). This work was also partially supported by the Precursory Research for Embryonic Science and Technology (PRESTO) program of the Japan Science and Technology Agency (JST) and the Cooperative Research Program of the “Network Joint Research Center for Materials and Devices.”

PY - 2017/10/23

Y1 - 2017/10/23

N2 - We conducted photoluminescence (PL) mapping to elucidate the detailed mechanism of PL enhancement based on the energy transfer from excitons to surface plasmon polaritons (SPPs) in silver-coated InGaN quantum wells (QWs). The PL mapping for bare InGaN QWs showed positive or negative correlations between the PL peak intensity and wavelength. These correlations are normally caused by exciton localization and the quantum confined Stark effect, respectively; however, they did not appear in the silver-coated region of the InGaN QWs, and the wavelength distribution shifted into shorter wavelengths due to the SP-induced PL enhancement. These results suggest that the energy transfer from the excitons to the SPPs should be much faster than that in the exciton localization and charge screening processes of the piezoelectric field in QWs.

AB - We conducted photoluminescence (PL) mapping to elucidate the detailed mechanism of PL enhancement based on the energy transfer from excitons to surface plasmon polaritons (SPPs) in silver-coated InGaN quantum wells (QWs). The PL mapping for bare InGaN QWs showed positive or negative correlations between the PL peak intensity and wavelength. These correlations are normally caused by exciton localization and the quantum confined Stark effect, respectively; however, they did not appear in the silver-coated region of the InGaN QWs, and the wavelength distribution shifted into shorter wavelengths due to the SP-induced PL enhancement. These results suggest that the energy transfer from the excitons to the SPPs should be much faster than that in the exciton localization and charge screening processes of the piezoelectric field in QWs.

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JF - Applied Physics Letters

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M1 - 172105

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Micro-photoluminescence mapping of surface plasmon enhanced light emissions from InGaN/GaN quantum wells

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