Micro-thermoelectric hydrogen sensor working with the combination of the thermoelectric effect of phosphorus-doped SiGe thin film and the Pt-catalyzed exothermic reaction of hydrogen oxidation has been fabricated. Sensitivity of hydrogen gas of the device was improved by doping the SiGe thermoelectric thin film deposited by helicon sputtering. copyright The Electrochemical Society.
|Number of pages||5|
|Publication status||Published - Dec 1 2006|
|Event||Sensors, Actuators, and Microsystems - 208th Electrochemical Society Meeting - Los Angeles, CA, United States|
Duration: Oct 16 2005 → Oct 21 2005
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