Abstract
Micro-thermoelectric hydrogen sensor working with the combination of the thermoelectric effect of phosphorus-doped SiGe thin film and the Pt-catalyzed exothermic reaction of hydrogen oxidation has been fabricated. Sensitivity of hydrogen gas of the device was improved by doping the SiGe thermoelectric thin film deposited by helicon sputtering. copyright The Electrochemical Society.
| Original language | English |
|---|---|
| Pages (from-to) | 23-27 |
| Number of pages | 5 |
| Journal | ECS Transactions |
| Volume | 1 |
| Issue number | 21 |
| DOIs | |
| Publication status | Published - Dec 1 2006 |
| Event | Sensors, Actuators, and Microsystems - 208th Electrochemical Society Meeting - Los Angeles, CA, United States Duration: Oct 16 2005 → Oct 21 2005 |
All Science Journal Classification (ASJC) codes
- Engineering(all)
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Cite this
Tajima, K., Shin, W., Nishibori, M., Itoh, T., Izu, N., & Matsubara, I. (2006). Micro-thermoelectric gas sensor with B- and P-doped SiGe thin film deposited by helicon sputtering. ECS Transactions, 1(21), 23-27. https://doi.org/10.1149/1.2218988