Micro-thermoelectric gas sensor with B- and P-doped SiGe thin film deposited by helicon sputtering

K. Tajima; W. Shin; M. Nishibori; T. Itoh; N. Izu; I. Matsubara

doi:10.1149/1.2218988

Micro-thermoelectric gas sensor with B- and P-doped SiGe thin film deposited by helicon sputtering

K. Tajima, W. Shin, M. Nishibori, T. Itoh, N. Izu, I. Matsubara

Research output: Contribution to journal › Conference article › peer-review

Abstract

Micro-thermoelectric hydrogen sensor working with the combination of the thermoelectric effect of phosphorus-doped SiGe thin film and the Pt-catalyzed exothermic reaction of hydrogen oxidation has been fabricated. Sensitivity of hydrogen gas of the device was improved by doping the SiGe thermoelectric thin film deposited by helicon sputtering. copyright The Electrochemical Society.

Original language	English
Pages (from-to)	23-27
Number of pages	5
Journal	ECS Transactions
Volume	1
Issue number	21
DOIs	https://doi.org/10.1149/1.2218988
Publication status	Published - Dec 1 2006
Externally published	Yes
Event	Sensors, Actuators, and Microsystems - 208th Electrochemical Society Meeting - Los Angeles, CA, United States Duration: Oct 16 2005 → Oct 21 2005

All Science Journal Classification (ASJC) codes

Engineering(all)

Access to Document

10.1149/1.2218988

Fingerprint Dive into the research topics of 'Micro-thermoelectric gas sensor with B- and P-doped SiGe thin film deposited by helicon sputtering'. Together they form a unique fingerprint.

Cite this

@article{c03a67112538402a842d51c2c343db6a,

title = "Micro-thermoelectric gas sensor with B- and P-doped SiGe thin film deposited by helicon sputtering",

abstract = "Micro-thermoelectric hydrogen sensor working with the combination of the thermoelectric effect of phosphorus-doped SiGe thin film and the Pt-catalyzed exothermic reaction of hydrogen oxidation has been fabricated. Sensitivity of hydrogen gas of the device was improved by doping the SiGe thermoelectric thin film deposited by helicon sputtering. copyright The Electrochemical Society.",

author = "K. Tajima and W. Shin and M. Nishibori and T. Itoh and N. Izu and I. Matsubara",

year = "2006",

month = dec,

day = "1",

doi = "10.1149/1.2218988",

language = "English",

volume = "1",

pages = "23--27",

journal = "ECS Transactions",

issn = "1938-5862",

publisher = "Electrochemical Society, Inc.",

number = "21",

note = "Sensors, Actuators, and Microsystems - 208th Electrochemical Society Meeting ; Conference date: 16-10-2005 Through 21-10-2005",

}

TY - JOUR

T1 - Micro-thermoelectric gas sensor with B- and P-doped SiGe thin film deposited by helicon sputtering

AU - Tajima, K.

AU - Shin, W.

AU - Nishibori, M.

AU - Itoh, T.

AU - Izu, N.

AU - Matsubara, I.

PY - 2006/12/1

Y1 - 2006/12/1

N2 - Micro-thermoelectric hydrogen sensor working with the combination of the thermoelectric effect of phosphorus-doped SiGe thin film and the Pt-catalyzed exothermic reaction of hydrogen oxidation has been fabricated. Sensitivity of hydrogen gas of the device was improved by doping the SiGe thermoelectric thin film deposited by helicon sputtering. copyright The Electrochemical Society.

AB - Micro-thermoelectric hydrogen sensor working with the combination of the thermoelectric effect of phosphorus-doped SiGe thin film and the Pt-catalyzed exothermic reaction of hydrogen oxidation has been fabricated. Sensitivity of hydrogen gas of the device was improved by doping the SiGe thermoelectric thin film deposited by helicon sputtering. copyright The Electrochemical Society.

UR - http://www.scopus.com/inward/record.url?scp=33846811587&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=33846811587&partnerID=8YFLogxK

U2 - 10.1149/1.2218988

DO - 10.1149/1.2218988

M3 - Conference article

AN - SCOPUS:33846811587

VL - 1

SP - 23

EP - 27

JO - ECS Transactions

JF - ECS Transactions

SN - 1938-5862

IS - 21

T2 - Sensors, Actuators, and Microsystems - 208th Electrochemical Society Meeting

Y2 - 16 October 2005 through 21 October 2005

ER -

Micro-thermoelectric gas sensor with B- and P-doped SiGe thin film deposited by helicon sputtering

Abstract

All Science Journal Classification (ASJC) codes

Access to Document

Other files and links

Cite this