Micro-thermoelectric gas sensor with B- and P-doped SiGe thin film deposited by helicon sputtering

K. Tajima, W. Shin, M. Nishibori, T. Itoh, N. Izu, I. Matsubara

Research output: Contribution to journalConference article

Abstract

Micro-thermoelectric hydrogen sensor working with the combination of the thermoelectric effect of phosphorus-doped SiGe thin film and the Pt-catalyzed exothermic reaction of hydrogen oxidation has been fabricated. Sensitivity of hydrogen gas of the device was improved by doping the SiGe thermoelectric thin film deposited by helicon sputtering. copyright The Electrochemical Society.

Original languageEnglish
Pages (from-to)23-27
Number of pages5
JournalECS Transactions
Volume1
Issue number21
DOIs
Publication statusPublished - Dec 1 2006
EventSensors, Actuators, and Microsystems - 208th Electrochemical Society Meeting - Los Angeles, CA, United States
Duration: Oct 16 2005Oct 21 2005

All Science Journal Classification (ASJC) codes

  • Engineering(all)

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