Microcavities with distributed Bragg reflectors based on ZnSe/MgS superlattice grown by MOVPE

T. Tawara; H. Yoshida; T. Yogo; Tanaka Satoru; I. Suemune

doi:10.1016/S0022-0248(00)00803-4

Microcavities with distributed Bragg reflectors based on ZnSe/MgS superlattice grown by MOVPE

T. Tawara, H. Yoshida, T. Yogo, Tanaka Satoru, I. Suemune

Research output: Contribution to journal › Article › peer-review

25 Citations (Scopus)

Abstract

Monolithic II-VI semiconductor microcavities for the blue-green region grown by metal-organic vapor-phase epitaxy have been demonstrated. ZnSe/MgS-superlattice (ZnSe/MgS-SL) layers were used for the distributed Bragg reflectors (DBRs). The DBR with only 5 periods showed the high reflectivity of 92% at the wavelength of 510 nm due to the large difference of refractive indices between ZnSe and MgS layers. In a monolithic II-VI microcavity structure based on these DBRs, a clear cavity resonance mode was observed in the blue-green region for the first time.

Original language	English
Pages (from-to)	699-703
Number of pages	5
Journal	Journal of Crystal Growth
Volume	221
Issue number	1-4
DOIs	https://doi.org/10.1016/S0022-0248(00)00803-4
Publication status	Published - Jan 1 2000
Externally published	Yes

All Science Journal Classification (ASJC) codes

Condensed Matter Physics
Inorganic Chemistry
Materials Chemistry

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10.1016/S0022-0248(00)00803-4

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title = "Microcavities with distributed Bragg reflectors based on ZnSe/MgS superlattice grown by MOVPE",

abstract = "Monolithic II-VI semiconductor microcavities for the blue-green region grown by metal-organic vapor-phase epitaxy have been demonstrated. ZnSe/MgS-superlattice (ZnSe/MgS-SL) layers were used for the distributed Bragg reflectors (DBRs). The DBR with only 5 periods showed the high reflectivity of 92% at the wavelength of 510 nm due to the large difference of refractive indices between ZnSe and MgS layers. In a monolithic II-VI microcavity structure based on these DBRs, a clear cavity resonance mode was observed in the blue-green region for the first time.",

author = "T. Tawara and H. Yoshida and T. Yogo and Tanaka Satoru and I. Suemune",

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T1 - Microcavities with distributed Bragg reflectors based on ZnSe/MgS superlattice grown by MOVPE

AU - Tawara, T.

AU - Yoshida, H.

AU - Yogo, T.

AU - Satoru, Tanaka

AU - Suemune, I.

PY - 2000/1/1

Y1 - 2000/1/1

N2 - Monolithic II-VI semiconductor microcavities for the blue-green region grown by metal-organic vapor-phase epitaxy have been demonstrated. ZnSe/MgS-superlattice (ZnSe/MgS-SL) layers were used for the distributed Bragg reflectors (DBRs). The DBR with only 5 periods showed the high reflectivity of 92% at the wavelength of 510 nm due to the large difference of refractive indices between ZnSe and MgS layers. In a monolithic II-VI microcavity structure based on these DBRs, a clear cavity resonance mode was observed in the blue-green region for the first time.

AB - Monolithic II-VI semiconductor microcavities for the blue-green region grown by metal-organic vapor-phase epitaxy have been demonstrated. ZnSe/MgS-superlattice (ZnSe/MgS-SL) layers were used for the distributed Bragg reflectors (DBRs). The DBR with only 5 periods showed the high reflectivity of 92% at the wavelength of 510 nm due to the large difference of refractive indices between ZnSe and MgS layers. In a monolithic II-VI microcavity structure based on these DBRs, a clear cavity resonance mode was observed in the blue-green region for the first time.

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Microcavities with distributed Bragg reflectors based on ZnSe/MgS superlattice grown by MOVPE

Abstract

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