Micromagnetic study on write operation in submicron magnetic random access memory cell

H. Asada, Kimihide Matsuyama, K. Taniguchi

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

In a spin-valve random access memory, the binary bit states of the storage cell are determined by the magnetization direction in the free magnetic layer. The write operation of a submicron memory cell element has been studied by a micromagnetic computation based on an energy minimization scheme, which aids in the chip design. The magnetization of the binary bit states in the element was found to take a single domain structure having the opposite direction of the long-axis component. The mean long-axis component of magnetization of each binary state was ±0.97 without external fields. The selective switching of the bit state in the element was performed by the write currents applied into the two level conductors overlying the element for various conditions. The influence of the write currents to the neighboring element on a two-dimensional memory array with a 1×1 μm pitch was also simulated, in order to confirm the selective switching of the memory element. It was found that the selective write current amplitude decreased with an increasing assist current amplitude and the range was extended by the large difference of the transverse magnetic field between the selected and neighboring element. The effect of the exchange interaction from the pinned magnetic layer on the write operation was also discussed.

Original languageEnglish
Pages (from-to)6646-6648
Number of pages3
JournalJournal of Applied Physics
Volume79
Issue number8 PART 2B
Publication statusPublished - Apr 15 1996

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random access memory
cells
magnetization
conductors
chips
optimization
magnetic fields
interactions
energy

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)
  • Physics and Astronomy (miscellaneous)

Cite this

Micromagnetic study on write operation in submicron magnetic random access memory cell. / Asada, H.; Matsuyama, Kimihide; Taniguchi, K.

In: Journal of Applied Physics, Vol. 79, No. 8 PART 2B, 15.04.1996, p. 6646-6648.

Research output: Contribution to journalArticle

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