Micropatterning of polymeric semiconductor by selective lift-off method using epoxy mold

Zhe Wang, Xinhong Yu, Rubo Xing, Yanchun Han, Atsushi Takahara

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

A simple and efficient method for patterning polymeric semiconductors for applications in the field of organic electronics is proposed. The entire polymer layer, except for the desired pattern, is selectively lifted off from a flat poly(dimethylsiloxane) (PDMS) stamp surface by an epoxy mold with a relief pattern. This is advantageous because the elastic deformation of the PDMS stamp around protrusions of a patterned stamp under pressure can assist the plastic deformation of a polymer film along the pattern edges, yielding large area and high quality patterns, and the PDMS surface has low surface energy, which allows the easy removal of the polymer film.

Original languageEnglish
Pages (from-to)1958-1962
Number of pages5
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume27
Issue number4
DOIs
Publication statusPublished - Aug 14 2009

Fingerprint

Polydimethylsiloxane
Semiconductor materials
Polymer films
polymers
Elastic deformation
Interfacial energy
elastic deformation
Plastic deformation
Electronic equipment
plastic deformation
surface energy
Polymers
electronics

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Electrical and Electronic Engineering

Cite this

Micropatterning of polymeric semiconductor by selective lift-off method using epoxy mold. / Wang, Zhe; Yu, Xinhong; Xing, Rubo; Han, Yanchun; Takahara, Atsushi.

In: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, Vol. 27, No. 4, 14.08.2009, p. 1958-1962.

Research output: Contribution to journalArticle

@article{fb39aab9bf8e457eb072992b8dc69d18,
title = "Micropatterning of polymeric semiconductor by selective lift-off method using epoxy mold",
abstract = "A simple and efficient method for patterning polymeric semiconductors for applications in the field of organic electronics is proposed. The entire polymer layer, except for the desired pattern, is selectively lifted off from a flat poly(dimethylsiloxane) (PDMS) stamp surface by an epoxy mold with a relief pattern. This is advantageous because the elastic deformation of the PDMS stamp around protrusions of a patterned stamp under pressure can assist the plastic deformation of a polymer film along the pattern edges, yielding large area and high quality patterns, and the PDMS surface has low surface energy, which allows the easy removal of the polymer film.",
author = "Zhe Wang and Xinhong Yu and Rubo Xing and Yanchun Han and Atsushi Takahara",
year = "2009",
month = "8",
day = "14",
doi = "10.1116/1.3167372",
language = "English",
volume = "27",
pages = "1958--1962",
journal = "Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures",
issn = "1071-1023",
number = "4",

}

TY - JOUR

T1 - Micropatterning of polymeric semiconductor by selective lift-off method using epoxy mold

AU - Wang, Zhe

AU - Yu, Xinhong

AU - Xing, Rubo

AU - Han, Yanchun

AU - Takahara, Atsushi

PY - 2009/8/14

Y1 - 2009/8/14

N2 - A simple and efficient method for patterning polymeric semiconductors for applications in the field of organic electronics is proposed. The entire polymer layer, except for the desired pattern, is selectively lifted off from a flat poly(dimethylsiloxane) (PDMS) stamp surface by an epoxy mold with a relief pattern. This is advantageous because the elastic deformation of the PDMS stamp around protrusions of a patterned stamp under pressure can assist the plastic deformation of a polymer film along the pattern edges, yielding large area and high quality patterns, and the PDMS surface has low surface energy, which allows the easy removal of the polymer film.

AB - A simple and efficient method for patterning polymeric semiconductors for applications in the field of organic electronics is proposed. The entire polymer layer, except for the desired pattern, is selectively lifted off from a flat poly(dimethylsiloxane) (PDMS) stamp surface by an epoxy mold with a relief pattern. This is advantageous because the elastic deformation of the PDMS stamp around protrusions of a patterned stamp under pressure can assist the plastic deformation of a polymer film along the pattern edges, yielding large area and high quality patterns, and the PDMS surface has low surface energy, which allows the easy removal of the polymer film.

UR - http://www.scopus.com/inward/record.url?scp=68349144899&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=68349144899&partnerID=8YFLogxK

U2 - 10.1116/1.3167372

DO - 10.1116/1.3167372

M3 - Article

AN - SCOPUS:68349144899

VL - 27

SP - 1958

EP - 1962

JO - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

JF - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

SN - 1071-1023

IS - 4

ER -