Microphotoluminescence evaluation of local strain for freestanding Si membranes with SiN deposition

Dong Wang, Hiroshi Nakashima, Jun Morioka, Tokuhide Kitamura

Research output: Contribution to journalArticle

12 Citations (Scopus)

Abstract

Microphotoluminescence (PL) was used to evaluate the local strain for freestanding Si membranes, which were fabricated by the mesa etching of Si on insulator followed by etching of the buried oxide. Compressive strain in the membranes was induced by SiN deposition using low-pressure chemical vapor deposition. Strain-induced band gap narrowing was directly observed by identifying the PL peak of the free exciton band-band transition in membranes, from which the strain ratio was estimated for each sample. Strain was reasonably dependent on the sample parameters, which implies that this measurement gives valid results.

Original languageEnglish
Article number241918
JournalApplied Physics Letters
Volume91
Issue number24
DOIs
Publication statusPublished - Dec 20 2007

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membranes
evaluation
etching
mesas
low pressure
excitons
insulators
vapor deposition
oxides

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

Microphotoluminescence evaluation of local strain for freestanding Si membranes with SiN deposition. / Wang, Dong; Nakashima, Hiroshi; Morioka, Jun; Kitamura, Tokuhide.

In: Applied Physics Letters, Vol. 91, No. 24, 241918, 20.12.2007.

Research output: Contribution to journalArticle

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