Microstructural change of dislocation structure around SiGe/Si interface in SGOI wafer with ramping process

Seiichiro Ii, Yuichi Takaki, Ken ichi Ikeda, Hideharu Nakashima, Hiroshi Nakashima

Research output: Contribution to journalArticle

Abstract

Microstructural change in SiGe/Si hetero interface of SiGe on insulator (SGOI) wafer with annealing was investigated by transmission electron microscopy. Misfit dislocations were observed in the specimen annealed at 1203 K. With further annealing above 1373 K, the straight shape of the misfit dislocations is change to the randomly curved and tangled with locking of the dislocation generated by the reaction of the two crossing misfit dislocations. Change in the morphology of the dislocation was also discussed from the crystallographic viewpoint.

Original languageEnglish
Pages (from-to)38-40
Number of pages3
JournalThin Solid Films
Volume517
Issue number1
DOIs
Publication statusPublished - Nov 3 2008

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Dislocations (crystals)
insulators
wafers
Annealing
annealing
locking
Transmission electron microscopy
transmission electron microscopy

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Materials Chemistry
  • Metals and Alloys
  • Surfaces, Coatings and Films
  • Surfaces and Interfaces

Cite this

Microstructural change of dislocation structure around SiGe/Si interface in SGOI wafer with ramping process. / Ii, Seiichiro; Takaki, Yuichi; Ikeda, Ken ichi; Nakashima, Hideharu; Nakashima, Hiroshi.

In: Thin Solid Films, Vol. 517, No. 1, 03.11.2008, p. 38-40.

Research output: Contribution to journalArticle

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AU - Nakashima, Hiroshi

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