Microstructure and strain distribution in freestanding Si membrane strained by SixNy deposition

Research output: Contribution to journalArticle

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Abstract

Strain in a bridge-shaped freestanding Si membrane (FSSM) induced by depositing an amorphous SixNy layer was measured by convergent-beam electron diffraction (CBED). CBED results show that the strain magnitude depends negatively on the FSSM thickness. FEM is a supplement of the result of CBED due to the relaxation of TEM samples during fabricating. The FEM analysis results ascertain the strain property in three dimensions, and show that the strain magnitude depends negatively on the length of FSSM, and the magnitude of the compressive strain in FSSM increases as the position is closer to the upper Si/SixNy interface.

Original languageEnglish
Pages (from-to)6633-6637
Number of pages5
JournalMaterials Science and Engineering A
Volume527
Issue number24-25
DOIs
Publication statusPublished - Sep 1 2010

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strain distribution
membranes
Membranes
microstructure
Microstructure
electron diffraction
Electron diffraction
supplements
Finite element method
transmission electron microscopy
Transmission electron microscopy

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Microstructure and strain distribution in freestanding Si membrane strained by SixNy deposition. / Gao, Hongye; Ikeda, Ken Ichi; Hata, Satoshi; Nakashima, Hideharu; Wang, Dong; Nakashima, Hiroshi.

In: Materials Science and Engineering A, Vol. 527, No. 24-25, 01.09.2010, p. 6633-6637.

Research output: Contribution to journalArticle

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AU - Wang, Dong

AU - Nakashima, Hiroshi

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