Microstructure and strain distribution in freestanding Si membrane strained by SixNy deposition

Hongye Gao, Ken Ichi Ikeda, Satoshi Hata, Hideharu Nakashima, Dong Wang, Hiroshi Nakashima

Research output: Contribution to journal › Article

1 Citation (Scopus)

Abstract

Strain in a bridge-shaped freestanding Si membrane (FSSM) induced by depositing an amorphous SixNy layer was measured by convergent-beam electron diffraction (CBED). CBED results show that the strain magnitude depends negatively on the FSSM thickness. FEM is a supplement of the result of CBED due to the relaxation of TEM samples during fabricating. The FEM analysis results ascertain the strain property in three dimensions, and show that the strain magnitude depends negatively on the length of FSSM, and the magnitude of the compressive strain in FSSM increases as the position is closer to the upper Si/SixNy interface.

Original languageEnglish
Pages (from-to)6633-6637
Number of pages5
JournalMaterials Science and Engineering A
Volume527
Issue number24-25
DOIs
Publication statusPublished - Sep 1 2010

Fingerprint

strain distribution
membranes
Membranes
microstructure
Microstructure
electron diffraction
Electron diffraction
supplements
Finite element method
transmission electron microscopy
Transmission electron microscopy

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Microstructure and strain distribution in freestanding Si membrane strained by SixNy deposition. / Gao, Hongye; Ikeda, Ken Ichi; Hata, Satoshi; Nakashima, Hideharu; Wang, Dong; Nakashima, Hiroshi.

In: Materials Science and Engineering A, Vol. 527, No. 24-25, 01.09.2010, p. 6633-6637.

Research output: Contribution to journal › Article

Gao, H, Ikeda, KI, Hata, S, Nakashima, H, Wang, D & Nakashima, H 2010, 'Microstructure and strain distribution in freestanding Si membrane strained by SixNy deposition', Materials Science and Engineering A, vol. 527, no. 24-25, pp. 6633-6637. https://doi.org/10.1016/j.msea.2010.07.004
Gao H, Ikeda KI, Hata S, Nakashima H, Wang D, Nakashima H. Microstructure and strain distribution in freestanding Si membrane strained by SixNy deposition. Materials Science and Engineering A. 2010 Sep 1;527(24-25):6633-6637. https://doi.org/10.1016/j.msea.2010.07.004
Gao, Hongye ; Ikeda, Ken Ichi ; Hata, Satoshi ; Nakashima, Hideharu ; Wang, Dong ; Nakashima, Hiroshi. / Microstructure and strain distribution in freestanding Si membrane strained by SixNy deposition. In: Materials Science and Engineering A. 2010 ; Vol. 527, No. 24-25. pp. 6633-6637.
@article{061215663d35418fb6907254498a503a,
title = "Microstructure and strain distribution in freestanding Si membrane strained by SixNy deposition",
abstract = "Strain in a bridge-shaped freestanding Si membrane (FSSM) induced by depositing an amorphous SixNy layer was measured by convergent-beam electron diffraction (CBED). CBED results show that the strain magnitude depends negatively on the FSSM thickness. FEM is a supplement of the result of CBED due to the relaxation of TEM samples during fabricating. The FEM analysis results ascertain the strain property in three dimensions, and show that the strain magnitude depends negatively on the length of FSSM, and the magnitude of the compressive strain in FSSM increases as the position is closer to the upper Si/SixNy interface.",
author = "Hongye Gao and Ikeda, {Ken Ichi} and Satoshi Hata and Hideharu Nakashima and Dong Wang and Hiroshi Nakashima",
year = "2010",
month = "9",
day = "1",
doi = "10.1016/j.msea.2010.07.004",
language = "English",
volume = "527",
pages = "6633--6637",
journal = "Materials Science & Engineering A: Structural Materials: Properties, Microstructure and Processing",
issn = "0921-5093",
publisher = "Elsevier BV",
number = "24-25",

}

TY - JOUR

T1 - Microstructure and strain distribution in freestanding Si membrane strained by SixNy deposition

AU - Gao, Hongye

AU - Ikeda, Ken Ichi

AU - Hata, Satoshi

AU - Nakashima, Hideharu

AU - Wang, Dong

AU - Nakashima, Hiroshi

PY - 2010/9/1

Y1 - 2010/9/1

N2 - Strain in a bridge-shaped freestanding Si membrane (FSSM) induced by depositing an amorphous SixNy layer was measured by convergent-beam electron diffraction (CBED). CBED results show that the strain magnitude depends negatively on the FSSM thickness. FEM is a supplement of the result of CBED due to the relaxation of TEM samples during fabricating. The FEM analysis results ascertain the strain property in three dimensions, and show that the strain magnitude depends negatively on the length of FSSM, and the magnitude of the compressive strain in FSSM increases as the position is closer to the upper Si/SixNy interface.

AB - Strain in a bridge-shaped freestanding Si membrane (FSSM) induced by depositing an amorphous SixNy layer was measured by convergent-beam electron diffraction (CBED). CBED results show that the strain magnitude depends negatively on the FSSM thickness. FEM is a supplement of the result of CBED due to the relaxation of TEM samples during fabricating. The FEM analysis results ascertain the strain property in three dimensions, and show that the strain magnitude depends negatively on the length of FSSM, and the magnitude of the compressive strain in FSSM increases as the position is closer to the upper Si/SixNy interface.

UR - http://www.scopus.com/inward/record.url?scp=77955918290&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=77955918290&partnerID=8YFLogxK

U2 - 10.1016/j.msea.2010.07.004

DO - 10.1016/j.msea.2010.07.004

M3 - Article

AN - SCOPUS:77955918290

VL - 527

SP - 6633

EP - 6637

JO - Materials Science & Engineering A: Structural Materials: Properties, Microstructure and Processing

JF - Materials Science & Engineering A: Structural Materials: Properties, Microstructure and Processing

SN - 0921-5093

IS - 24-25

ER -

Access to Document