Several reaction-induced diffusion processes to fabricate high-density MgB2 materials are developed, and the critical current density (Jc) has been notably enhanced. In this study, microstructure in high-density MgB2 wires fabricated by an internal Mg diffusion (IMD) process has been investigated. The inner reacted region of the wire heat-treated at 640 °C for 1 h shows dense polycrystalline MgB2 of 20-200 nm in grain sizes. Fine MgO and Mg2Si particles of 10-30 nm in sizes are dispersed in this region. On the other hand, the outer region near the Ta sheath is composed of unreacted B and SiC powders, fine MgO particles and small voids. Sizes of voids in the IMD MgB2 wire are small compared with the PIT MgB2 wire. Oxidation of Mg in the IMD process forms fine dispersion of MgO which may be effective for flux pinning.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering