Microstructure of AlN grown on a nucleation layer on a sapphire substrate

Reina Miyagawa, Shibo Yang, Hideto Miyake, Kazumasa Hiramatsu, Takaaki Kuwahara, Masatoshi Mitsuhara, Noriyuki Kuwano

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Abstract

The growth conditions and interface microstructure of AlN on sapphire grown using a nucleation layer (NL) have been studied. The AlN layer with NL-AlN grown at 1100 °C exhibits a smooth surface morphology. The epilayer has a small amount of tilting but the twisting is large. For the AlN layer with NL-AlN grown at 1250 °C, the twisting is reduced, but the surface is rough owing to the mixing of crystallographic polarity. The origins of AlN inversion domains are discussed by considering the microstructures observed by transmission electron microscopy (TEM), with the ultimate aim of growing a high-quality AlN layer.

Original languageEnglish
Article number025501
JournalApplied Physics Express
Volume5
Issue number2
DOIs
Publication statusPublished - Feb 1 2012

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

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    Miyagawa, R., Yang, S., Miyake, H., Hiramatsu, K., Kuwahara, T., Mitsuhara, M., & Kuwano, N. (2012). Microstructure of AlN grown on a nucleation layer on a sapphire substrate. Applied Physics Express, 5(2), [025501]. https://doi.org/10.1143/APEX.5.025501