We used transmission electron microscopy to analyse the microstructures in a thick AlN layer grown on a self-nucleated, columnar AlN seed crystal. The growth direction of the AlN layer grown by a new solution growth method was . The threading dislocation (TD) density near the epilayer-seed interface (on the seed crystal) was 109 cm-2. However, owing to dislocation annihilation, the TD density decreased to 108 cm-2 at a thickness of ∼5 μm. These results imply that the new solution growth method can grow high-crystalline-quality bulk AlN under moderate growth conditions (τ ≈ 1200 °C, nitrogen pressure = 1 atm).
All Science Journal Classification (ASJC) codes
- Physics and Astronomy(all)