TY - JOUR
T1 - Microstructure of bulk AlN grown by a new solution growth method
AU - Kangawa, Yoshihiro
AU - Kuwano, Noriyuki
AU - Epelbaum, Boris M.
AU - Kakimoto, Koichi
PY - 2011/12
Y1 - 2011/12
N2 - We used transmission electron microscopy to analyse the microstructures in a thick AlN layer grown on a self-nucleated, columnar AlN seed crystal. The growth direction of the AlN layer grown by a new solution growth method was [1100]. The threading dislocation (TD) density near the epilayer-seed interface (on the seed crystal) was 109 cm-2. However, owing to dislocation annihilation, the TD density decreased to 108 cm-2 at a thickness of ∼5 μm. These results imply that the new solution growth method can grow high-crystalline-quality bulk AlN under moderate growth conditions (τ ≈ 1200 °C, nitrogen pressure = 1 atm).
AB - We used transmission electron microscopy to analyse the microstructures in a thick AlN layer grown on a self-nucleated, columnar AlN seed crystal. The growth direction of the AlN layer grown by a new solution growth method was [1100]. The threading dislocation (TD) density near the epilayer-seed interface (on the seed crystal) was 109 cm-2. However, owing to dislocation annihilation, the TD density decreased to 108 cm-2 at a thickness of ∼5 μm. These results imply that the new solution growth method can grow high-crystalline-quality bulk AlN under moderate growth conditions (τ ≈ 1200 °C, nitrogen pressure = 1 atm).
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U2 - 10.1143/JJAP.50.120202
DO - 10.1143/JJAP.50.120202
M3 - Article
AN - SCOPUS:82955228002
SN - 0021-4922
VL - 50
JO - Japanese Journal of Applied Physics
JF - Japanese Journal of Applied Physics
IS - 12
M1 - 120202
ER -