Microstructure of Ge:Ta2O5 granular thin films: An application of TEM-tomography

Hongye Gao, Shoichi Toh, Syo Matsumura, Seishi Abe, Shigehiro Ohnuma

Research output: Contribution to journalArticle

Abstract

Microstructure of Ge: Ta2O5 granular thin films were observed by Transmission Electron Microscopy (TEM), Scanning Transmission Electron Microscopy with Energy Dispersive Spectrometer (STEM-EDS), and TEM with electron tomography. Three dimensional images Ge: Ta2O5 granular thin films were obtained from a tilt series of images, which were taken at regular tilt intervals. Some convex parts of irregular Ge granules, which overlapped by themselves or Ta2O5 in this thin film, have been well characterized to explain why there are many Moiré patterns in this Ge: Ta2O5 granular thin films. The result acquired by TEM with electron tomography shows Ge crystals have been grown up in a preferred orientation due to the confinement from the surrounding matrix. TEM with electron tomography can be used successfully to show the shapes of Ge particles distributed in the Ta2O5 network of this thin film, also the more detailed aspects of grown direction of this granular thin film.

Original languageEnglish
Pages (from-to)2567-2571
Number of pages5
JournalMaterials Transactions
Volume48
Issue number10
DOIs
Publication statusPublished - Oct 1 2007

Fingerprint

Tomography
tomography
Transmission electron microscopy
Thin films
transmission electron microscopy
microstructure
Microstructure
thin films
Electrons
electrons
Crystal orientation
Spectrometers
spectrometers
intervals
Crystals
Scanning electron microscopy
scanning electron microscopy
matrices
crystals
energy

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Metals and Alloys

Cite this

Microstructure of Ge:Ta2O5 granular thin films : An application of TEM-tomography. / Gao, Hongye; Toh, Shoichi; Matsumura, Syo; Abe, Seishi; Ohnuma, Shigehiro.

In: Materials Transactions, Vol. 48, No. 10, 01.10.2007, p. 2567-2571.

Research output: Contribution to journalArticle

Gao, Hongye ; Toh, Shoichi ; Matsumura, Syo ; Abe, Seishi ; Ohnuma, Shigehiro. / Microstructure of Ge:Ta2O5 granular thin films : An application of TEM-tomography. In: Materials Transactions. 2007 ; Vol. 48, No. 10. pp. 2567-2571.
@article{faa84aa1e29d468ba89eb821cba60afb,
title = "Microstructure of Ge:Ta2O5 granular thin films: An application of TEM-tomography",
abstract = "Microstructure of Ge: Ta2O5 granular thin films were observed by Transmission Electron Microscopy (TEM), Scanning Transmission Electron Microscopy with Energy Dispersive Spectrometer (STEM-EDS), and TEM with electron tomography. Three dimensional images Ge: Ta2O5 granular thin films were obtained from a tilt series of images, which were taken at regular tilt intervals. Some convex parts of irregular Ge granules, which overlapped by themselves or Ta2O5 in this thin film, have been well characterized to explain why there are many Moir{\'e} patterns in this Ge: Ta2O5 granular thin films. The result acquired by TEM with electron tomography shows Ge crystals have been grown up in a preferred orientation due to the confinement from the surrounding matrix. TEM with electron tomography can be used successfully to show the shapes of Ge particles distributed in the Ta2O5 network of this thin film, also the more detailed aspects of grown direction of this granular thin film.",
author = "Hongye Gao and Shoichi Toh and Syo Matsumura and Seishi Abe and Shigehiro Ohnuma",
year = "2007",
month = "10",
day = "1",
doi = "10.2320/matertrans.MD200711",
language = "English",
volume = "48",
pages = "2567--2571",
journal = "Materials Transactions",
issn = "0916-1821",
publisher = "The Japan Institute of Metals and Materials",
number = "10",

}

TY - JOUR

T1 - Microstructure of Ge:Ta2O5 granular thin films

T2 - An application of TEM-tomography

AU - Gao, Hongye

AU - Toh, Shoichi

AU - Matsumura, Syo

AU - Abe, Seishi

AU - Ohnuma, Shigehiro

PY - 2007/10/1

Y1 - 2007/10/1

N2 - Microstructure of Ge: Ta2O5 granular thin films were observed by Transmission Electron Microscopy (TEM), Scanning Transmission Electron Microscopy with Energy Dispersive Spectrometer (STEM-EDS), and TEM with electron tomography. Three dimensional images Ge: Ta2O5 granular thin films were obtained from a tilt series of images, which were taken at regular tilt intervals. Some convex parts of irregular Ge granules, which overlapped by themselves or Ta2O5 in this thin film, have been well characterized to explain why there are many Moiré patterns in this Ge: Ta2O5 granular thin films. The result acquired by TEM with electron tomography shows Ge crystals have been grown up in a preferred orientation due to the confinement from the surrounding matrix. TEM with electron tomography can be used successfully to show the shapes of Ge particles distributed in the Ta2O5 network of this thin film, also the more detailed aspects of grown direction of this granular thin film.

AB - Microstructure of Ge: Ta2O5 granular thin films were observed by Transmission Electron Microscopy (TEM), Scanning Transmission Electron Microscopy with Energy Dispersive Spectrometer (STEM-EDS), and TEM with electron tomography. Three dimensional images Ge: Ta2O5 granular thin films were obtained from a tilt series of images, which were taken at regular tilt intervals. Some convex parts of irregular Ge granules, which overlapped by themselves or Ta2O5 in this thin film, have been well characterized to explain why there are many Moiré patterns in this Ge: Ta2O5 granular thin films. The result acquired by TEM with electron tomography shows Ge crystals have been grown up in a preferred orientation due to the confinement from the surrounding matrix. TEM with electron tomography can be used successfully to show the shapes of Ge particles distributed in the Ta2O5 network of this thin film, also the more detailed aspects of grown direction of this granular thin film.

UR - http://www.scopus.com/inward/record.url?scp=36549057091&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=36549057091&partnerID=8YFLogxK

U2 - 10.2320/matertrans.MD200711

DO - 10.2320/matertrans.MD200711

M3 - Article

AN - SCOPUS:36549057091

VL - 48

SP - 2567

EP - 2571

JO - Materials Transactions

JF - Materials Transactions

SN - 0916-1821

IS - 10

ER -