Microwave assisted spin transfer torque switching in a vertically integrated logic-in-memory architecture

H. Yu, X. Ya, Terumitsu Tanaka, Kimihide Matsuyama

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Current information devices will be confronted with a serious physical limit in the lateral downsizing in the future. An alternative approach for continuous progress in the device performance is intensively demanded. An integration of multi functionality, such as memory and logic components, is a promising solution for an increasing requirement in various system applications [1,2]. In the present study, an exchange coupled multilayer stack, was proposed as a quarterly state logic-in-memory structure, and fundamental device operations have been numerically demonstrated with micromagnetic simulations.

Original languageEnglish
Title of host publication2015 IEEE International Magnetics Conference, INTERMAG 2015
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781479973224
DOIs
Publication statusPublished - Jan 1 2015
Event2015 IEEE International Magnetics Conference, INTERMAG 2015 - Beijing, China
Duration: May 11 2015May 15 2015

Other

Other2015 IEEE International Magnetics Conference, INTERMAG 2015
CountryChina
CityBeijing
Period5/11/155/15/15

All Science Journal Classification (ASJC) codes

  • Surfaces, Coatings and Films
  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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    Yu, H., Ya, X., Tanaka, T., & Matsuyama, K. (2015). Microwave assisted spin transfer torque switching in a vertically integrated logic-in-memory architecture. In 2015 IEEE International Magnetics Conference, INTERMAG 2015 [7157552] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/INTMAG.2015.7157552