TY - JOUR
T1 - Mn 2O 3 slurry reuse by circulation achieving high constant removal rate
AU - Kishii, Sadahiro
AU - Nakamura, Ko
AU - Hanawa, Kenzo
AU - Watanabe, Satoru
AU - Arimoto, Yoshihiro
AU - Kurokawa, Syuhei
AU - Doi, Toshiro K.
PY - 2012/4
Y1 - 2012/4
N2 - Fumed silica is widely used in SiO 2 chemical mechanical polishing (CMP). In semiconductor processes, only fresh slurry is used, and used slurry is disposed. Sustainable development demands a reduction in waste. Since reuse of slurry is effective for reducing the amount of used slurry generated, we investigated the reuse of Mn 2O 3 slurry and conventional fumed silica slurry. In both cases, abrasive concentration decreases as reuse time increases. The removal rate for Mn 2O 3 slurry maintains a value 4 times that of the conventional fumed silica slurry during slurry reuse, because the removal rate for Mn 2O 3 slurry is almost constant for solid concentrations between 1.0 and 10 wt %. Pad conditioning was not performed for Mn 2O 3 slurry. The removal rate for conventional slurry decreases as the number of times of reuse increases, even when pad conditioning is appropriately performed.
AB - Fumed silica is widely used in SiO 2 chemical mechanical polishing (CMP). In semiconductor processes, only fresh slurry is used, and used slurry is disposed. Sustainable development demands a reduction in waste. Since reuse of slurry is effective for reducing the amount of used slurry generated, we investigated the reuse of Mn 2O 3 slurry and conventional fumed silica slurry. In both cases, abrasive concentration decreases as reuse time increases. The removal rate for Mn 2O 3 slurry maintains a value 4 times that of the conventional fumed silica slurry during slurry reuse, because the removal rate for Mn 2O 3 slurry is almost constant for solid concentrations between 1.0 and 10 wt %. Pad conditioning was not performed for Mn 2O 3 slurry. The removal rate for conventional slurry decreases as the number of times of reuse increases, even when pad conditioning is appropriately performed.
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U2 - 10.1143/JJAP.51.04DB07
DO - 10.1143/JJAP.51.04DB07
M3 - Article
AN - SCOPUS:84860381341
SN - 0021-4922
VL - 51
JO - Japanese Journal of Applied Physics
JF - Japanese Journal of Applied Physics
IS - 4 PART 2
M1 - 04DB07
ER -