MnGeP 2 thin films grown by molecular beam epitaxy

T. Ishibashi, K. Minami, J. Jogo, T. Nagatsuka, H. Yuasa, V. Smirnov, Yoshihiro Kangawa, A. Koukitu, K. Sato

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

Growth conditions for MnGeP 2 thin films have been investigated by using molecular beam epitaxy (MBE) method. Mn and Ge were evaporated by K-cells, and P 2 was supplied by decomposing tertialybutylphosphine (TBP). GaAs (001) and InP (001) single crystals were used as substrates. An X-ray diffraction peak, which can be assigned to (008) peak of MnGeP 2 , was observed at nearly the same position as the (004) peak of GaAs. The lattice constant of the MnGeP 2 thin film was determined to be 1.13 nm assuming its crystal structure is a c-axis oriented chalcopyrite type structure. Secondary phases such as GeP, MnGe x and MnP were observed for beam fluxes of Mn and Ge as high as 1 × 10 -8 Torr.

Original languageEnglish
Pages (from-to)79-82
Number of pages4
JournalJournal of Superconductivity and Novel Magnetism
Volume18
Issue number1
DOIs
Publication statusPublished - Dec 1 2005
Externally publishedYes

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Molecular beam epitaxy
molecular beam epitaxy
Thin films
thin films
Lattice constants
Crystal structure
Single crystals
Fluxes
X ray diffraction
Substrates
crystal structure
single crystals
cells
diffraction
gallium arsenide
x rays
chalcopyrite

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

Ishibashi, T., Minami, K., Jogo, J., Nagatsuka, T., Yuasa, H., Smirnov, V., ... Sato, K. (2005). MnGeP 2 thin films grown by molecular beam epitaxy Journal of Superconductivity and Novel Magnetism, 18(1), 79-82. https://doi.org/10.1007/s10948-005-2154-8

MnGeP 2 thin films grown by molecular beam epitaxy . / Ishibashi, T.; Minami, K.; Jogo, J.; Nagatsuka, T.; Yuasa, H.; Smirnov, V.; Kangawa, Yoshihiro; Koukitu, A.; Sato, K.

In: Journal of Superconductivity and Novel Magnetism, Vol. 18, No. 1, 01.12.2005, p. 79-82.

Research output: Contribution to journalArticle

Ishibashi, T, Minami, K, Jogo, J, Nagatsuka, T, Yuasa, H, Smirnov, V, Kangawa, Y, Koukitu, A & Sato, K 2005, ' MnGeP 2 thin films grown by molecular beam epitaxy ', Journal of Superconductivity and Novel Magnetism, vol. 18, no. 1, pp. 79-82. https://doi.org/10.1007/s10948-005-2154-8
Ishibashi T, Minami K, Jogo J, Nagatsuka T, Yuasa H, Smirnov V et al. MnGeP 2 thin films grown by molecular beam epitaxy Journal of Superconductivity and Novel Magnetism. 2005 Dec 1;18(1):79-82. https://doi.org/10.1007/s10948-005-2154-8
Ishibashi, T. ; Minami, K. ; Jogo, J. ; Nagatsuka, T. ; Yuasa, H. ; Smirnov, V. ; Kangawa, Yoshihiro ; Koukitu, A. ; Sato, K. / MnGeP 2 thin films grown by molecular beam epitaxy In: Journal of Superconductivity and Novel Magnetism. 2005 ; Vol. 18, No. 1. pp. 79-82.
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AU - Minami, K.

AU - Jogo, J.

AU - Nagatsuka, T.

AU - Yuasa, H.

AU - Smirnov, V.

AU - Kangawa, Yoshihiro

AU - Koukitu, A.

AU - Sato, K.

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