TY - JOUR
T1 - MnGeP2 thin films grown by molecular beam epitaxy
AU - Ishibashi, T.
AU - Minami, K.
AU - Jogo, J.
AU - Nagatsuka, T.
AU - Yuasa, H.
AU - Smirnov, V.
AU - Kangawa, Y.
AU - Koukitu, A.
AU - Sato, K.
N1 - Funding Information:
This work has been carried out under the 21st COE Project “Future Nano Materials” of TUAT and supported in part by the Grant-in-Aid for Scientific Research from Japan Society for the Promotion of Science.
Copyright:
Copyright 2008 Elsevier B.V., All rights reserved.
PY - 2005
Y1 - 2005
N2 - Growth conditions for MnGeP2 thin films have been investigated by using molecular beam epitaxy (MBE) method. Mn and Ge were evaporated by K-cells, and P2 was supplied by decomposing tertialybutylphosphine (TBP). GaAs (001) and InP (001) single crystals were used as substrates. An X-ray diffraction peak, which can be assigned to (008) peak of MnGeP 2, was observed at nearly the same position as the (004) peak of GaAs. The lattice constant of the MnGeP2 thin film was determined to be 1.13 nm assuming its crystal structure is a c-axis oriented chalcopyrite type structure. Secondary phases such as GeP, MnGex and MnP were observed for beam fluxes of Mn and Ge as high as 1 × 10-8 Torr.
AB - Growth conditions for MnGeP2 thin films have been investigated by using molecular beam epitaxy (MBE) method. Mn and Ge were evaporated by K-cells, and P2 was supplied by decomposing tertialybutylphosphine (TBP). GaAs (001) and InP (001) single crystals were used as substrates. An X-ray diffraction peak, which can be assigned to (008) peak of MnGeP 2, was observed at nearly the same position as the (004) peak of GaAs. The lattice constant of the MnGeP2 thin film was determined to be 1.13 nm assuming its crystal structure is a c-axis oriented chalcopyrite type structure. Secondary phases such as GeP, MnGex and MnP were observed for beam fluxes of Mn and Ge as high as 1 × 10-8 Torr.
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U2 - 10.1007/s10948-005-2154-8
DO - 10.1007/s10948-005-2154-8
M3 - Article
AN - SCOPUS:17444397495
VL - 18
SP - 79
EP - 82
JO - Journal of Superconductivity and Novel Magnetism
JF - Journal of Superconductivity and Novel Magnetism
SN - 1557-1939
IS - 1
ER -