MnGeP
                        2
                         thin films grown by molecular beam epitaxy

T. Ishibashi; K. Minami; J. Jogo; T. Nagatsuka; H. Yuasa; V. Smirnov; Yoshihiro Kangawa; A. Koukitu; K. Sato

doi:10.1007/s10948-005-2154-8

MnGeP ₂ thin films grown by molecular beam epitaxy

T. Ishibashi, K. Minami, J. Jogo, T. Nagatsuka, H. Yuasa, V. Smirnov, Yoshihiro Kangawa, A. Koukitu, K. Sato

Research output: Contribution to journal › Article › peer-review

1 Citation (Scopus)

Abstract

Growth conditions for MnGeP ₂ thin films have been investigated by using molecular beam epitaxy (MBE) method. Mn and Ge were evaporated by K-cells, and P ₂ was supplied by decomposing tertialybutylphosphine (TBP). GaAs (001) and InP (001) single crystals were used as substrates. An X-ray diffraction peak, which can be assigned to (008) peak of MnGeP ₂ , was observed at nearly the same position as the (004) peak of GaAs. The lattice constant of the MnGeP ₂ thin film was determined to be 1.13 nm assuming its crystal structure is a c-axis oriented chalcopyrite type structure. Secondary phases such as GeP, MnGe _x and MnP were observed for beam fluxes of Mn and Ge as high as 1 × 10 ^-8 Torr.

Original language	English
Pages (from-to)	79-82
Number of pages	4
Journal	Journal of Superconductivity and Novel Magnetism
Volume	18
Issue number	1
DOIs	https://doi.org/10.1007/s10948-005-2154-8
Publication status	Published - Dec 1 2005
Externally published	Yes

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics

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10.1007/s10948-005-2154-8

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Ishibashi, T., Minami, K., Jogo, J., Nagatsuka, T., Yuasa, H., Smirnov, V., Kangawa, Y., Koukitu, A., & Sato, K. (2005). MnGeP ₂ thin films grown by molecular beam epitaxy Journal of Superconductivity and Novel Magnetism, 18(1), 79-82. https://doi.org/10.1007/s10948-005-2154-8

MnGeP ₂ thin films grown by molecular beam epitaxy . / Ishibashi, T.; Minami, K.; Jogo, J.; Nagatsuka, T.; Yuasa, H.; Smirnov, V.; Kangawa, Yoshihiro; Koukitu, A.; Sato, K.

In: Journal of Superconductivity and Novel Magnetism, Vol. 18, No. 1, 01.12.2005, p. 79-82.

Research output: Contribution to journal › Article › peer-review

Ishibashi, T, Minami, K, Jogo, J, Nagatsuka, T, Yuasa, H, Smirnov, V, Kangawa, Y, Koukitu, A & Sato, K 2005, ' MnGeP ₂ thin films grown by molecular beam epitaxy ', Journal of Superconductivity and Novel Magnetism, vol. 18, no. 1, pp. 79-82. https://doi.org/10.1007/s10948-005-2154-8

@article{caf8c5233ca448aea2995f09b4d001fe,

title = " MnGeP 2 thin films grown by molecular beam epitaxy ",

abstract = " Growth conditions for MnGeP 2 thin films have been investigated by using molecular beam epitaxy (MBE) method. Mn and Ge were evaporated by K-cells, and P 2 was supplied by decomposing tertialybutylphosphine (TBP). GaAs (001) and InP (001) single crystals were used as substrates. An X-ray diffraction peak, which can be assigned to (008) peak of MnGeP 2 , was observed at nearly the same position as the (004) peak of GaAs. The lattice constant of the MnGeP 2 thin film was determined to be 1.13 nm assuming its crystal structure is a c-axis oriented chalcopyrite type structure. Secondary phases such as GeP, MnGe x and MnP were observed for beam fluxes of Mn and Ge as high as 1 × 10 -8 Torr.",

author = "T. Ishibashi and K. Minami and J. Jogo and T. Nagatsuka and H. Yuasa and V. Smirnov and Yoshihiro Kangawa and A. Koukitu and K. Sato",

year = "2005",

month = dec,

day = "1",

doi = "10.1007/s10948-005-2154-8",

language = "English",

volume = "18",

pages = "79--82",

journal = "Journal of Superconductivity and Novel Magnetism",

issn = "1557-1939",

publisher = "Springer New York",

number = "1",

}

TY - JOUR

T1 - MnGeP 2 thin films grown by molecular beam epitaxy

AU - Ishibashi, T.

AU - Minami, K.

AU - Jogo, J.

AU - Nagatsuka, T.

AU - Yuasa, H.

AU - Smirnov, V.

AU - Kangawa, Yoshihiro

AU - Koukitu, A.

AU - Sato, K.

PY - 2005/12/1

Y1 - 2005/12/1

N2 - Growth conditions for MnGeP 2 thin films have been investigated by using molecular beam epitaxy (MBE) method. Mn and Ge were evaporated by K-cells, and P 2 was supplied by decomposing tertialybutylphosphine (TBP). GaAs (001) and InP (001) single crystals were used as substrates. An X-ray diffraction peak, which can be assigned to (008) peak of MnGeP 2 , was observed at nearly the same position as the (004) peak of GaAs. The lattice constant of the MnGeP 2 thin film was determined to be 1.13 nm assuming its crystal structure is a c-axis oriented chalcopyrite type structure. Secondary phases such as GeP, MnGe x and MnP were observed for beam fluxes of Mn and Ge as high as 1 × 10 -8 Torr.

AB - Growth conditions for MnGeP 2 thin films have been investigated by using molecular beam epitaxy (MBE) method. Mn and Ge were evaporated by K-cells, and P 2 was supplied by decomposing tertialybutylphosphine (TBP). GaAs (001) and InP (001) single crystals were used as substrates. An X-ray diffraction peak, which can be assigned to (008) peak of MnGeP 2 , was observed at nearly the same position as the (004) peak of GaAs. The lattice constant of the MnGeP 2 thin film was determined to be 1.13 nm assuming its crystal structure is a c-axis oriented chalcopyrite type structure. Secondary phases such as GeP, MnGe x and MnP were observed for beam fluxes of Mn and Ge as high as 1 × 10 -8 Torr.

UR - http://www.scopus.com/inward/record.url?scp=17444397495&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=17444397495&partnerID=8YFLogxK

U2 - 10.1007/s10948-005-2154-8

DO - 10.1007/s10948-005-2154-8

M3 - Article

AN - SCOPUS:17444397495

VL - 18

SP - 79

EP - 82

JO - Journal of Superconductivity and Novel Magnetism

JF - Journal of Superconductivity and Novel Magnetism

SN - 1557-1939

IS - 1

ER -