Abstract
Growth conditions for MnGeP 2 thin films have been investigated by using molecular beam epitaxy (MBE) method. Mn and Ge were evaporated by K-cells, and P 2 was supplied by decomposing tertialybutylphosphine (TBP). GaAs (001) and InP (001) single crystals were used as substrates. An X-ray diffraction peak, which can be assigned to (008) peak of MnGeP 2 , was observed at nearly the same position as the (004) peak of GaAs. The lattice constant of the MnGeP 2 thin film was determined to be 1.13 nm assuming its crystal structure is a c-axis oriented chalcopyrite type structure. Secondary phases such as GeP, MnGe x and MnP were observed for beam fluxes of Mn and Ge as high as 1 × 10 -8 Torr.
Original language | English |
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Pages (from-to) | 79-82 |
Number of pages | 4 |
Journal | Journal of Superconductivity and Novel Magnetism |
Volume | 18 |
Issue number | 1 |
DOIs | |
Publication status | Published - Dec 1 2005 |
Externally published | Yes |
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics