MnGeP 2 thin films grown by molecular beam epitaxy

T. Ishibashi, K. Minami, J. Jogo, T. Nagatsuka, H. Yuasa, V. Smirnov, Yoshihiro Kangawa, A. Koukitu, K. Sato

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1 Citation (Scopus)

Abstract

Growth conditions for MnGeP 2 thin films have been investigated by using molecular beam epitaxy (MBE) method. Mn and Ge were evaporated by K-cells, and P 2 was supplied by decomposing tertialybutylphosphine (TBP). GaAs (001) and InP (001) single crystals were used as substrates. An X-ray diffraction peak, which can be assigned to (008) peak of MnGeP 2 , was observed at nearly the same position as the (004) peak of GaAs. The lattice constant of the MnGeP 2 thin film was determined to be 1.13 nm assuming its crystal structure is a c-axis oriented chalcopyrite type structure. Secondary phases such as GeP, MnGe x and MnP were observed for beam fluxes of Mn and Ge as high as 1 × 10 -8 Torr.

Original languageEnglish
Pages (from-to)79-82
Number of pages4
JournalJournal of Superconductivity and Novel Magnetism
Volume18
Issue number1
DOIs
Publication statusPublished - Dec 1 2005
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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