MnGeP2 thin films grown by molecular beam epitaxy

T. Ishibashi, K. Minami, J. Jogo, T. Nagatsuka, H. Yuasa, V. Smirnov, Y. Kangawa, A. Koukitu, K. Sato

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1 Citation (Scopus)

Abstract

Growth conditions for MnGeP2 thin films have been investigated by using molecular beam epitaxy (MBE) method. Mn and Ge were evaporated by K-cells, and P2 was supplied by decomposing tertialybutylphosphine (TBP). GaAs (001) and InP (001) single crystals were used as substrates. An X-ray diffraction peak, which can be assigned to (008) peak of MnGeP 2, was observed at nearly the same position as the (004) peak of GaAs. The lattice constant of the MnGeP2 thin film was determined to be 1.13 nm assuming its crystal structure is a c-axis oriented chalcopyrite type structure. Secondary phases such as GeP, MnGex and MnP were observed for beam fluxes of Mn and Ge as high as 1 × 10-8 Torr.

Original languageEnglish
Pages (from-to)79-82
Number of pages4
JournalJournal of Superconductivity and Novel Magnetism
Volume18
Issue number1
DOIs
Publication statusPublished - 2005
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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