Abstract
Growth conditions for MnGeP 2 thin films have been investigated by using molecular beam epitaxy (MBE) method. Mn and Ge were evaporated by K-cells, and P 2 was supplied by decomposing tertialybutylphosphine (TBP). GaAs (001) and InP (001) single crystals were used as substrates. An X-ray diffraction peak, which can be assigned to (008) peak of MnGeP 2 , was observed at nearly the same position as the (004) peak of GaAs. The lattice constant of the MnGeP 2 thin film was determined to be 1.13 nm assuming its crystal structure is a c-axis oriented chalcopyrite type structure. Secondary phases such as GeP, MnGe x and MnP were observed for beam fluxes of Mn and Ge as high as 1 × 10 -8 Torr.
| Original language | English |
|---|---|
| Pages (from-to) | 79-82 |
| Number of pages | 4 |
| Journal | Journal of Superconductivity and Novel Magnetism |
| Volume | 18 |
| Issue number | 1 |
| DOIs | |
| Publication status | Published - Dec 1 2005 |
| Externally published | Yes |
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All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
Cite this
MnGeP 2 thin films grown by molecular beam epitaxy . / Ishibashi, T.; Minami, K.; Jogo, J.; Nagatsuka, T.; Yuasa, H.; Smirnov, V.; Kangawa, Yoshihiro; Koukitu, A.; Sato, K.
In: Journal of Superconductivity and Novel Magnetism, Vol. 18, No. 1, 01.12.2005, p. 79-82.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - MnGeP 2 thin films grown by molecular beam epitaxy
AU - Ishibashi, T.
AU - Minami, K.
AU - Jogo, J.
AU - Nagatsuka, T.
AU - Yuasa, H.
AU - Smirnov, V.
AU - Kangawa, Yoshihiro
AU - Koukitu, A.
AU - Sato, K.
PY - 2005/12/1
Y1 - 2005/12/1
N2 - Growth conditions for MnGeP 2 thin films have been investigated by using molecular beam epitaxy (MBE) method. Mn and Ge were evaporated by K-cells, and P 2 was supplied by decomposing tertialybutylphosphine (TBP). GaAs (001) and InP (001) single crystals were used as substrates. An X-ray diffraction peak, which can be assigned to (008) peak of MnGeP 2 , was observed at nearly the same position as the (004) peak of GaAs. The lattice constant of the MnGeP 2 thin film was determined to be 1.13 nm assuming its crystal structure is a c-axis oriented chalcopyrite type structure. Secondary phases such as GeP, MnGe x and MnP were observed for beam fluxes of Mn and Ge as high as 1 × 10 -8 Torr.
AB - Growth conditions for MnGeP 2 thin films have been investigated by using molecular beam epitaxy (MBE) method. Mn and Ge were evaporated by K-cells, and P 2 was supplied by decomposing tertialybutylphosphine (TBP). GaAs (001) and InP (001) single crystals were used as substrates. An X-ray diffraction peak, which can be assigned to (008) peak of MnGeP 2 , was observed at nearly the same position as the (004) peak of GaAs. The lattice constant of the MnGeP 2 thin film was determined to be 1.13 nm assuming its crystal structure is a c-axis oriented chalcopyrite type structure. Secondary phases such as GeP, MnGe x and MnP were observed for beam fluxes of Mn and Ge as high as 1 × 10 -8 Torr.
UR - http://www.scopus.com/inward/record.url?scp=17444397495&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=17444397495&partnerID=8YFLogxK
U2 - 10.1007/s10948-005-2154-8
DO - 10.1007/s10948-005-2154-8
M3 - Article
AN - SCOPUS:17444397495
VL - 18
SP - 79
EP - 82
JO - Journal of Superconductivity and Novel Magnetism
JF - Journal of Superconductivity and Novel Magnetism
SN - 1557-1939
IS - 1
ER -