TY - JOUR
T1 - MOCVD growth of epitaxial pyrochlore Bi2Ti2 O7 thin film
AU - Suzuki, Muneyasu
AU - Watanabe, Takayuki
AU - Takenaka, Tadashi
AU - Funakubo, Hiroshi
N1 - Copyright:
Copyright 2008 Elsevier B.V., All rights reserved.
PY - 2006
Y1 - 2006
N2 - Growth of Bi2Ti2O7 films on the substrates having cubic-structure was investigated by metal organic chemical vapor deposition (MOCVD). (1 0 0), (1 1 0) and (1 1 1)SrTiO3 single crystals, (1 1 1)-oriented Pt- and SrRuO3-coated (1 1 1)SrTiO3 were used as substrates together with (1 1 1)Pt/TiO2/SiO2/Si. Peaks originated to Bi2Ti2O7 phase were not detected on (1 0 0), (1 1 0) and (1 1 1)SrTiO3 substrates. On the other hand, (1 1 1)-oriented Bi2 Ti2O7 phase was ascertained to be prepared on (1 1 1)Pt//(1 1 1)SrTiO3 and (1 1 1)Pt/TiO2/ SiO2/Si substrates in spite of the almost the same lattice parameters of SrRuO3 and SrTiO3 with Pt. From the pole figure measurement, Bi2Ti2O7 films prepared on the (1 1 1)Pt//(1 1 1)SrTiO3 substrates were ascertained epitaxial grown, (1 1 1)Bi2Ti2 O7//(1 1 1)Pt//(1 1 1)SrTiO3, while that on the (1 1 1)Pt/TiO2/SiO2/Si were (1 1 1)-one-axis-oriented Bi2Ti2O7 with in-plain random. The easy growth of (1 1 1)-oriented Bi2Ti2O7 film on (1 1 1)Pt layer can be explain by the existence of the sub-unit in (1 1 1)Pt plane consist of three Pt atoms.
AB - Growth of Bi2Ti2O7 films on the substrates having cubic-structure was investigated by metal organic chemical vapor deposition (MOCVD). (1 0 0), (1 1 0) and (1 1 1)SrTiO3 single crystals, (1 1 1)-oriented Pt- and SrRuO3-coated (1 1 1)SrTiO3 were used as substrates together with (1 1 1)Pt/TiO2/SiO2/Si. Peaks originated to Bi2Ti2O7 phase were not detected on (1 0 0), (1 1 0) and (1 1 1)SrTiO3 substrates. On the other hand, (1 1 1)-oriented Bi2 Ti2O7 phase was ascertained to be prepared on (1 1 1)Pt//(1 1 1)SrTiO3 and (1 1 1)Pt/TiO2/ SiO2/Si substrates in spite of the almost the same lattice parameters of SrRuO3 and SrTiO3 with Pt. From the pole figure measurement, Bi2Ti2O7 films prepared on the (1 1 1)Pt//(1 1 1)SrTiO3 substrates were ascertained epitaxial grown, (1 1 1)Bi2Ti2 O7//(1 1 1)Pt//(1 1 1)SrTiO3, while that on the (1 1 1)Pt/TiO2/SiO2/Si were (1 1 1)-one-axis-oriented Bi2Ti2O7 with in-plain random. The easy growth of (1 1 1)-oriented Bi2Ti2O7 film on (1 1 1)Pt layer can be explain by the existence of the sub-unit in (1 1 1)Pt plane consist of three Pt atoms.
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U2 - 10.1016/j.jeurceramsoc.2005.09.103
DO - 10.1016/j.jeurceramsoc.2005.09.103
M3 - Article
AN - SCOPUS:33645562218
SN - 0955-2219
VL - 26
SP - 2155
EP - 2159
JO - Journal of the European Ceramic Society
JF - Journal of the European Ceramic Society
IS - 10-11
ER -