SrBi4Ti4Oi15 (SBTi) films were fabricated for the first time at 700°C by thermal metal-organic (MO)CVD from a Bi(CH3)3Sr(O2C11H 19))2(C8H23N5) 2-Ti(O·i-C3H7)4-O 2 system. The deposition rate of each constituent oxide linearly increased with an increase in the input gas-flow rate of the corresponding source. Perfectly single-axis, c-oriented SBTi films were obtained on (111)Pt/TiO2/SiO2/(100)Si substrates by inserting a (100)c,-oriented LaNiO3 conductive buffer layer as an interfacial template. These films had a relative dielectric constant of about 140 which showed no decrease when the film thickness was reduced to 30 nm.
All Science Journal Classification (ASJC) codes
- Surfaces and Interfaces
- Process Chemistry and Technology