Model for thickness dependence of mobility and concentration in highly conductive ZnO

D. C. Look, K. D. Leedy, A. Kiefer, B. Claflin, Naho Itagaki, K. Matsushima, I. Surhariadi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

The dependences of the 294-K and 10-K mobility μ and volume carrier concentration n on thickness (d = 25 -147 nm) were examined in Al-doped ZnO (AZO) layers grown in Ar ambient at 200 °C on quartz-glass substrates. Two AZO layers were grown at each thickness, one with and one without a 20-nm-thick ZnON buffer layer grown at 300 °C in Ar/N2 ambient. Plots of the 10-K sheet concentration ns vs d for buffered (B) and unbuffered (UB) samples give straight lines of similar slope, n = 8.36 x 1020 and 8.32 x 1020 cm-3, but different x-axis intercepts, δd = -4 and +13 nm, respectively. Thus, the electrical thicknesses are d -δd = d + 4 and d -13 nm, respectively. Plots of ns vs d at 294 K produced substantially the same results. Plots of μ vs d can be well fitted with the equation μ(d) = μ(infinity symbol)/[1 + d*/(d-δd)], where d* is the thickness for which μ(infinity symbol) is reduced by a factor 2. For the B and UB samples, d* = 7 and 23 nm, respectively, showing the efficacy of the ZnON buffer. Finally, from n and μ(infinity symbol) we can use degenerate electron scattering theory to calculate bulk donor and acceptor concentrations of 1.23 x 1021 cm-3 and 1.95 x 1020 cm -3, respectively, and Drude theory to predict a plasmonic resonance at1.34 μm. The latter is confirmed by reflectance measurements.

Original languageEnglish
Title of host publicationOxide-Based Materials and Devices IV
Volume8626
DOIs
Publication statusPublished - May 30 2013
EventOxide-Based Materials and Devices IV - San Francisco, CA, United States
Duration: Feb 3 2013Feb 6 2013

Other

OtherOxide-Based Materials and Devices IV
CountryUnited States
CitySan Francisco, CA
Period2/3/132/6/13

Fingerprint

Quartz
Electron scattering
Reflectometers
Buffer layers
Carrier concentration
Buffers
infinity
Glass
plots
Infinity
Substrates
Buffer
buffers
Plasmonics
Scattering Theory
Intercept
Reflectance
Straight Line
Model
Efficacy

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

Cite this

Look, D. C., Leedy, K. D., Kiefer, A., Claflin, B., Itagaki, N., Matsushima, K., & Surhariadi, I. (2013). Model for thickness dependence of mobility and concentration in highly conductive ZnO. In Oxide-Based Materials and Devices IV (Vol. 8626). [862602] https://doi.org/10.1117/12.2001287

Model for thickness dependence of mobility and concentration in highly conductive ZnO. / Look, D. C.; Leedy, K. D.; Kiefer, A.; Claflin, B.; Itagaki, Naho; Matsushima, K.; Surhariadi, I.

Oxide-Based Materials and Devices IV. Vol. 8626 2013. 862602.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Look, DC, Leedy, KD, Kiefer, A, Claflin, B, Itagaki, N, Matsushima, K & Surhariadi, I 2013, Model for thickness dependence of mobility and concentration in highly conductive ZnO. in Oxide-Based Materials and Devices IV. vol. 8626, 862602, Oxide-Based Materials and Devices IV, San Francisco, CA, United States, 2/3/13. https://doi.org/10.1117/12.2001287
Look DC, Leedy KD, Kiefer A, Claflin B, Itagaki N, Matsushima K et al. Model for thickness dependence of mobility and concentration in highly conductive ZnO. In Oxide-Based Materials and Devices IV. Vol. 8626. 2013. 862602 https://doi.org/10.1117/12.2001287
Look, D. C. ; Leedy, K. D. ; Kiefer, A. ; Claflin, B. ; Itagaki, Naho ; Matsushima, K. ; Surhariadi, I. / Model for thickness dependence of mobility and concentration in highly conductive ZnO. Oxide-Based Materials and Devices IV. Vol. 8626 2013.
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AU - Matsushima, K.

AU - Surhariadi, I.

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N2 - The dependences of the 294-K and 10-K mobility μ and volume carrier concentration n on thickness (d = 25 -147 nm) were examined in Al-doped ZnO (AZO) layers grown in Ar ambient at 200 °C on quartz-glass substrates. Two AZO layers were grown at each thickness, one with and one without a 20-nm-thick ZnON buffer layer grown at 300 °C in Ar/N2 ambient. Plots of the 10-K sheet concentration ns vs d for buffered (B) and unbuffered (UB) samples give straight lines of similar slope, n = 8.36 x 1020 and 8.32 x 1020 cm-3, but different x-axis intercepts, δd = -4 and +13 nm, respectively. Thus, the electrical thicknesses are d -δd = d + 4 and d -13 nm, respectively. Plots of ns vs d at 294 K produced substantially the same results. Plots of μ vs d can be well fitted with the equation μ(d) = μ(infinity symbol)/[1 + d*/(d-δd)], where d* is the thickness for which μ(infinity symbol) is reduced by a factor 2. For the B and UB samples, d* = 7 and 23 nm, respectively, showing the efficacy of the ZnON buffer. Finally, from n and μ(infinity symbol) we can use degenerate electron scattering theory to calculate bulk donor and acceptor concentrations of 1.23 x 1021 cm-3 and 1.95 x 1020 cm -3, respectively, and Drude theory to predict a plasmonic resonance at1.34 μm. The latter is confirmed by reflectance measurements.

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