Modeling and Characterization of InAs Quantum-Well Metal-Oxide-Semiconductor Field Effect Transistors on Quartz for 1.0 THz Wave Detection

T. Maeda, H. Ishii, W. H. Chang, H. Kanaya, Tanemasa Asano

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The electromagnetic wave of 1.0 terahertz (THz) was detected using a square law detector made of InAs quantum-well (QW) metal-oxide-semiconductor field effect transistors (MOSFETs) fabricated on quartz. The voltage responsivity of 1.7 kV/W was achieved at room temperature. The noise equivalent power (NEP) was evaluated to be below 2\pW Hz0.5. A new circuit model which well explains the detection characteristic and dependence of the sensitivity on physical parameters of MOSFETs is proposed. These results prove the high potential of InAs QW MOSFETs on quartz for implementation of THz imaging.

Original languageEnglish
Title of host publication4th Electron Devices Technology and Manufacturing Conference, EDTM 2020 - Proceedings
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781728125381
DOIs
Publication statusPublished - Apr 2020
Event4th Electron Devices Technology and Manufacturing Conference, EDTM 2020 - Penang, Malaysia
Duration: Apr 6 2020Apr 21 2020

Publication series

Name4th Electron Devices Technology and Manufacturing Conference, EDTM 2020 - Proceedings

Conference

Conference4th Electron Devices Technology and Manufacturing Conference, EDTM 2020
CountryMalaysia
CityPenang
Period4/6/204/21/20

All Science Journal Classification (ASJC) codes

  • Hardware and Architecture
  • Electrical and Electronic Engineering
  • Industrial and Manufacturing Engineering
  • Electronic, Optical and Magnetic Materials

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