TY - GEN
T1 - Modeling and simulation of Si IGBTs
AU - Shigyo, N.
AU - Watanabe, M.
AU - Kakushima, K.
AU - Hoshii, T.
AU - Furukawa, K.
AU - Nakajima, A.
AU - Satoh, K.
AU - Matsudai, T.
AU - Saraya, T.
AU - Takakura, T.
AU - Itou, K.
AU - Fukui, M.
AU - Suzuki, S.
AU - Takeuchi, K.
AU - Muneta, I.
AU - Wakabayashi, H.
AU - Nishizawa, S.
AU - Tsutsui, K.
AU - Hiramoto, T.
AU - Ohashi, H.
AU - Iwai, H.
N1 - Funding Information:
This work was based on results obtained from the project (JPNP10022) commissioned by the New Energy and Industrial Technology Development Organization (NEDO).
Publisher Copyright:
© 2020 The Japan Society of Applied Physics.
PY - 2020/9/23
Y1 - 2020/9/23
N2 - Technology CAD (TCAD) has been recognized as a powerful design tool for Si insulated gate bipolar transistors (IGBTs). Here, physical models, such as a mobility model for carrier-carrier scattering, were investigated for a predictive TCAD. Simulated currentvoltage characteristics of the trench-gate IGBTs were compared with measurements. The difference between 3D- and 2D-TCAD simulations was observed in a high current region, which was explained by a bias-dependent current flow. A test element group (TEG) for separation of the emitter currents for holes and electrons was also determined as effective for calibration of lifetime model parameters.
AB - Technology CAD (TCAD) has been recognized as a powerful design tool for Si insulated gate bipolar transistors (IGBTs). Here, physical models, such as a mobility model for carrier-carrier scattering, were investigated for a predictive TCAD. Simulated currentvoltage characteristics of the trench-gate IGBTs were compared with measurements. The difference between 3D- and 2D-TCAD simulations was observed in a high current region, which was explained by a bias-dependent current flow. A test element group (TEG) for separation of the emitter currents for holes and electrons was also determined as effective for calibration of lifetime model parameters.
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U2 - 10.23919/SISPAD49475.2020.9241627
DO - 10.23919/SISPAD49475.2020.9241627
M3 - Conference contribution
AN - SCOPUS:85096243988
T3 - International Conference on Simulation of Semiconductor Processes and Devices, SISPAD
SP - 129
EP - 132
BT - 2020 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2020
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 2020 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2020
Y2 - 3 September 2020 through 6 October 2020
ER -