Modeling grown-in dislocation multiplication on prismatic slip planes for GaN single crystals

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

To dynamically model the grown-in dislocation multiplication on prismatic slip planes for GaN single crystal growth, the Alexander-Haasen (AH) model, which was originally used to model the plastic deformation of silicon crystals, is extended to GaN single crystals. By fitting the model to the experimental data, we found that it can accurately describe the plastic deformation of GaN caused by prismatic slip. A set of unified parameters for the AH model at different temperatures can be found. This model provides a possible method to minimize grown-in dislocations caused due to prismatic slip by optimizing growing and cooling conditions during GaN single crystal growth.

Original languageEnglish
Article number035701
JournalJournal of Applied Physics
Volume117
Issue number3
DOIs
Publication statusPublished - Jan 1 2015

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multiplication
slip
single crystals
plastic deformation
crystal growth
cooling
silicon
crystals
temperature

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

Cite this

Modeling grown-in dislocation multiplication on prismatic slip planes for GaN single crystals. / Gao, B.; Kakimoto, Koichi.

In: Journal of Applied Physics, Vol. 117, No. 3, 035701, 01.01.2015.

Research output: Contribution to journalArticle

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