Modeling of SiC-CVD on Si-face/C-face in a horizontal hot-wall reactor

Shin Ichi Nishizawa, Kazutoshi Kojima, Satoshi Kuroda, Kazuo Arai, Michel Pons

Research output: Contribution to journalConference article

14 Citations (Scopus)

Abstract

To explain the difference between SiC-CVD on the Si-face and C-face, a heterogeneous model was improved, in which the etching, growth and doping features of SiC-CVD in a horizontal hot-wall reactor were numerically analyzed. The improved model was able to explain the etching and growth features accurately. There was no difference between the Si- and C-face. In addition, we propose the surface C/Si ratio as the universal parameter of the SiC-CVD process. Concerning doping features, the improved model showed that nitrogen and aluminum doping incorporation could be explained by the site competition model, while taking into account the amount of surface silicon and surface carbon, respectively.

Original languageEnglish
Pages (from-to)e515-e520
JournalJournal of Crystal Growth
Volume275
Issue number1-2
DOIs
Publication statusPublished - Feb 15 2005

Fingerprint

Chemical vapor deposition
reactors
vapor deposition
Doping (additives)
Etching
etching
Silicon
Aluminum
Nitrogen
Carbon
aluminum
nitrogen
carbon
silicon

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

Cite this

Modeling of SiC-CVD on Si-face/C-face in a horizontal hot-wall reactor. / Nishizawa, Shin Ichi; Kojima, Kazutoshi; Kuroda, Satoshi; Arai, Kazuo; Pons, Michel.

In: Journal of Crystal Growth, Vol. 275, No. 1-2, 15.02.2005, p. e515-e520.

Research output: Contribution to journalConference article

Nishizawa, Shin Ichi ; Kojima, Kazutoshi ; Kuroda, Satoshi ; Arai, Kazuo ; Pons, Michel. / Modeling of SiC-CVD on Si-face/C-face in a horizontal hot-wall reactor. In: Journal of Crystal Growth. 2005 ; Vol. 275, No. 1-2. pp. e515-e520.
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