Modeling of the 3D unsteady melt flow in an industrial-scale Cz-Si crystal growth using LES method

Xin Liu, Lijun Liu, Yuan Wang, Koichi Kakimoto

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

A computational model was presented for the 3D unsteady turbulent melt flow in an industrial-scale Cz-Si growth with Large Eddy Simulation (LES) method in curvilinear grids. The turbulent transport of momentum and heat in the melt was investigated. The turbulent nature of unsteadiness and three-dimensionality of the melt flow was verified. Fluctuation of the thermal field was obviously observed in the melt region close to the melt-crystal interface.

Original languageEnglish
Title of host publicationChina Semiconductor Technology International Conference 2010, CSTIC 2010
Pages1035-1039
Number of pages5
Edition1
DOIs
Publication statusPublished - Dec 1 2010
EventChina Semiconductor Technology International Conference 2010, CSTIC 2010 - Shanghai, China
Duration: Mar 18 2010Mar 19 2010

Publication series

NameECS Transactions
Number1
Volume27
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Other

OtherChina Semiconductor Technology International Conference 2010, CSTIC 2010
CountryChina
CityShanghai
Period3/18/103/19/10

Fingerprint

Large eddy simulation
Crystal growth
Momentum
Crystals
Hot Temperature

All Science Journal Classification (ASJC) codes

  • Engineering(all)

Cite this

Liu, X., Liu, L., Wang, Y., & Kakimoto, K. (2010). Modeling of the 3D unsteady melt flow in an industrial-scale Cz-Si crystal growth using LES method. In China Semiconductor Technology International Conference 2010, CSTIC 2010 (1 ed., pp. 1035-1039). (ECS Transactions; Vol. 27, No. 1). https://doi.org/10.1149/1.3360747

Modeling of the 3D unsteady melt flow in an industrial-scale Cz-Si crystal growth using LES method. / Liu, Xin; Liu, Lijun; Wang, Yuan; Kakimoto, Koichi.

China Semiconductor Technology International Conference 2010, CSTIC 2010. 1. ed. 2010. p. 1035-1039 (ECS Transactions; Vol. 27, No. 1).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Liu, X, Liu, L, Wang, Y & Kakimoto, K 2010, Modeling of the 3D unsteady melt flow in an industrial-scale Cz-Si crystal growth using LES method. in China Semiconductor Technology International Conference 2010, CSTIC 2010. 1 edn, ECS Transactions, no. 1, vol. 27, pp. 1035-1039, China Semiconductor Technology International Conference 2010, CSTIC 2010, Shanghai, China, 3/18/10. https://doi.org/10.1149/1.3360747
Liu X, Liu L, Wang Y, Kakimoto K. Modeling of the 3D unsteady melt flow in an industrial-scale Cz-Si crystal growth using LES method. In China Semiconductor Technology International Conference 2010, CSTIC 2010. 1 ed. 2010. p. 1035-1039. (ECS Transactions; 1). https://doi.org/10.1149/1.3360747
Liu, Xin ; Liu, Lijun ; Wang, Yuan ; Kakimoto, Koichi. / Modeling of the 3D unsteady melt flow in an industrial-scale Cz-Si crystal growth using LES method. China Semiconductor Technology International Conference 2010, CSTIC 2010. 1. ed. 2010. pp. 1035-1039 (ECS Transactions; 1).
@inproceedings{808b94382a0a44b6882b5241df35549b,
title = "Modeling of the 3D unsteady melt flow in an industrial-scale Cz-Si crystal growth using LES method",
abstract = "A computational model was presented for the 3D unsteady turbulent melt flow in an industrial-scale Cz-Si growth with Large Eddy Simulation (LES) method in curvilinear grids. The turbulent transport of momentum and heat in the melt was investigated. The turbulent nature of unsteadiness and three-dimensionality of the melt flow was verified. Fluctuation of the thermal field was obviously observed in the melt region close to the melt-crystal interface.",
author = "Xin Liu and Lijun Liu and Yuan Wang and Koichi Kakimoto",
year = "2010",
month = "12",
day = "1",
doi = "10.1149/1.3360747",
language = "English",
isbn = "9781607682639",
series = "ECS Transactions",
number = "1",
pages = "1035--1039",
booktitle = "China Semiconductor Technology International Conference 2010, CSTIC 2010",
edition = "1",

}

TY - GEN

T1 - Modeling of the 3D unsteady melt flow in an industrial-scale Cz-Si crystal growth using LES method

AU - Liu, Xin

AU - Liu, Lijun

AU - Wang, Yuan

AU - Kakimoto, Koichi

PY - 2010/12/1

Y1 - 2010/12/1

N2 - A computational model was presented for the 3D unsteady turbulent melt flow in an industrial-scale Cz-Si growth with Large Eddy Simulation (LES) method in curvilinear grids. The turbulent transport of momentum and heat in the melt was investigated. The turbulent nature of unsteadiness and three-dimensionality of the melt flow was verified. Fluctuation of the thermal field was obviously observed in the melt region close to the melt-crystal interface.

AB - A computational model was presented for the 3D unsteady turbulent melt flow in an industrial-scale Cz-Si growth with Large Eddy Simulation (LES) method in curvilinear grids. The turbulent transport of momentum and heat in the melt was investigated. The turbulent nature of unsteadiness and three-dimensionality of the melt flow was verified. Fluctuation of the thermal field was obviously observed in the melt region close to the melt-crystal interface.

UR - http://www.scopus.com/inward/record.url?scp=84863154875&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84863154875&partnerID=8YFLogxK

U2 - 10.1149/1.3360747

DO - 10.1149/1.3360747

M3 - Conference contribution

AN - SCOPUS:84863154875

SN - 9781607682639

T3 - ECS Transactions

SP - 1035

EP - 1039

BT - China Semiconductor Technology International Conference 2010, CSTIC 2010

ER -