Modeling of the 3D unsteady melt flow in an industrial-scale Cz-Si crystal growth using LES method

Xin Liu, Lijun Liu, Yuan Wang, Koichi Kakimoto

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

A computational model was presented for the 3D unsteady turbulent melt flow in an industrial-scale Cz-Si growth with Large Eddy Simulation (LES) method in curvilinear grids. The turbulent transport of momentum and heat in the melt was investigated. The turbulent nature of unsteadiness and three-dimensionality of the melt flow was verified. Fluctuation of the thermal field was obviously observed in the melt region close to the melt-crystal interface.

Original languageEnglish
Title of host publicationChina Semiconductor Technology International Conference 2010, CSTIC 2010
Pages1035-1039
Number of pages5
Edition1
DOIs
Publication statusPublished - Dec 1 2010
EventChina Semiconductor Technology International Conference 2010, CSTIC 2010 - Shanghai, China
Duration: Mar 18 2010Mar 19 2010

Publication series

NameECS Transactions
Number1
Volume27
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Other

OtherChina Semiconductor Technology International Conference 2010, CSTIC 2010
CountryChina
CityShanghai
Period3/18/103/19/10

All Science Journal Classification (ASJC) codes

  • Engineering(all)

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    Liu, X., Liu, L., Wang, Y., & Kakimoto, K. (2010). Modeling of the 3D unsteady melt flow in an industrial-scale Cz-Si crystal growth using LES method. In China Semiconductor Technology International Conference 2010, CSTIC 2010 (1 ed., pp. 1035-1039). (ECS Transactions; Vol. 27, No. 1). https://doi.org/10.1149/1.3360747