Modification of heat and mass transfers and their effect on the crystal-melt interface shape of Si single crystal during Czochralski crystal growth

Masahito Watanabe, Koichi Kakimoto, Minoru Eguchi, Taketoshi Hibiya

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

The modification of heat transfer in molten silicon during Czochralski (CZ) crystal growth is discussed by focusing on the transition of the flow mode from axisymmetric to nonaxisymmetric, in order to clarify the mechanism of crystal-melt interface shape deformation. Heat transfer in silicon melt is observed by measuring the difference in temperature near the crucible wall and at the crystal-melt interface with simultaneous observation of molten silicon flow. We confirm that the heat transfer coefficient of silicon melt is reduced when the flow mode is changed from axisymmetric to non-axisymmetric. The crystal-melt interface shape changed as a result of the modified heat transfer, which is due to the flow mode transition from axisymmetric to non-axisymmetric.

Original languageEnglish
Pages (from-to)6181-6186
Number of pages6
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume36
Issue number10
DOIs
Publication statusPublished - 1997

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

Fingerprint Dive into the research topics of 'Modification of heat and mass transfers and their effect on the crystal-melt interface shape of Si single crystal during Czochralski crystal growth'. Together they form a unique fingerprint.

Cite this