Modified metal-induced lateral crystallization using amorphous Ge/Si layered structure

Hiroshi Kanno, Atsushi Kenjo, Taizoh Sadoh, Masanobu Miyao

Research output: Contribution to journalArticle

21 Citations (Scopus)

Abstract

Amorphous layered structures of Ge/Si were used for investigating metal-induced lateral crystallization (MILC). Secondary-ion mass spectroscopy (SIMS) assisted in the evaluation of the concentration profiles of Si, Ge, and Ni atoms at room temperature. As compared with the conventional MILC using a-Si single layers, modified MILC velocity increased by three times. In a short time annealing, poly-Si films with large areas were obtained. The bond rearrangement in the a-Si layers that was induced by crystal nucleation in a-Ge layers was responsible for the enhancement obtained for the layered structures.

Original languageEnglish
Pages (from-to)899-901
Number of pages3
JournalApplied Physics Letters
Volume85
Issue number6
DOIs
Publication statusPublished - Aug 9 2004

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crystallization
metals
mass spectroscopy
nucleation
annealing
augmentation
evaluation
room temperature
profiles
crystals
atoms
ions

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

Modified metal-induced lateral crystallization using amorphous Ge/Si layered structure. / Kanno, Hiroshi; Kenjo, Atsushi; Sadoh, Taizoh; Miyao, Masanobu.

In: Applied Physics Letters, Vol. 85, No. 6, 09.08.2004, p. 899-901.

Research output: Contribution to journalArticle

Kanno, Hiroshi ; Kenjo, Atsushi ; Sadoh, Taizoh ; Miyao, Masanobu. / Modified metal-induced lateral crystallization using amorphous Ge/Si layered structure. In: Applied Physics Letters. 2004 ; Vol. 85, No. 6. pp. 899-901.
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