Molecular beam epitaxial growth of ferromagnetic Heusler alloys for group-IV semiconductor spintronic devices

M. Miyao, K. Hamaya, T. Sadoh, H. Itoh, Y. Maeda

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Abstract

Our recent progress in low-temperature molecular beam epitaxy of ferromagnetic Heusler alloys on group-IV-semiconductor is reviewed. By optimizing beam flux ratio (Fe:Si = 3:1) and growth temperature (130 °C), a high-quality hybrid structure, i.e., DO3-type Fe3Si on Ge with an atomically flat interface, was achieved. Excellent magnetic properties with a small coercivity (0.9 Oe) and electrical properties with Schottky barrier height of 0.52 eV were obtained. The ratio of the on-current to the off-current of Schottky diode was on the order of 104. In addition, heteroepitaxy of half-metallic alloys (Fe3 - XMnxSi(X = 0.6-1.4)) on Ge substrates was demonstrated. These results will be a powerful tool to open up group-IV-semiconductor spin-transistors, consisting of Ge channel with high mobility and ferromagnetic source/drain for spin-injection.

Original languageEnglish
Pages (from-to)S273-S277
JournalThin Solid Films
Volume518
Issue number6 SUPPL. 1
DOIs
Publication statusPublished - Jan 1 2010

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All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

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