Molecular beam epitaxy growth of Sr1-xKxFe2As2and Ba1-xKxFe2As2

Michio Naito, Shinya Ueda, Soichiro Takeda, Shiro Takano, Akihiro Mitsuda

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

Single-crystalline films of superconducting Sr1-xKxFe2As2 and Ba1-xKxFe2As2 were grown by molecular beam epitaxy (MBE). The most crucial problem in MBE growth of these compounds is the high volatility of elemental K. The key to incorporating K into films is low-temperature growth (≤ 350°C) in reduced As flux. We performed a systematic study of the doping dependence of Tc in Ba1-xKxFe2As2 for x = 0.0 to 1.0. The highest Tcon (Tcend) so far attained for Ba1-xKxFe2As2 is 38.3 K (35.5 K) at x ∼ 0.3.

Original languageEnglish
Title of host publicationRecent Advances in Superconductors, Novel Compounds and High-TC Materials
EditorsJ. Shimoyama, E. Hellstrom, M. Putti, K. Matsumoto, T. Kiss
PublisherMaterials Research Society
Pages17-22
Number of pages6
EditionJanuary
ISBN (Electronic)9781510804791
DOIs
Publication statusPublished - Jan 1 2012
Event2012 MRS Spring Meeting - San Francisco, CA, United States
Duration: Apr 9 2012Apr 13 2012

Publication series

NameMaterials Research Society Symposium Proceedings
NumberJanuary
Volume1434
ISSN (Print)0272-9172

Other

Other2012 MRS Spring Meeting
CountryUnited States
CitySan Francisco, CA
Period4/9/124/13/12

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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