Molecular beam epitaxy growth of Sr1-xKxFe2As2and Ba1-xKxFe2As2

Michio Naito, Shinya Ueda, Soichiro Takeda, Shiro Takano, Akihiro Mitsuda

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

Single-crystalline films of superconducting Sr1-xKxFe2As2 and Ba1-xKxFe2As2 were grown by molecular beam epitaxy (MBE). The most crucial problem in MBE growth of these compounds is the high volatility of elemental K. The key to incorporating K into films is low-temperature growth (≤ 350°C) in reduced As flux. We performed a systematic study of the doping dependence of Tc in Ba1-xKxFe2As2 for x = 0.0 to 1.0. The highest Tcon (Tcend) so far attained for Ba1-xKxFe2As2 is 38.3 K (35.5 K) at x ∼ 0.3.

Original languageEnglish
Title of host publicationRecent Advances in Superconductors, Novel Compounds and High-TC Materials
EditorsJ. Shimoyama, E. Hellstrom, M. Putti, K. Matsumoto, T. Kiss
PublisherMaterials Research Society
Pages17-22
Number of pages6
EditionJanuary
ISBN (Electronic)9781510804791
DOIs
Publication statusPublished - Jan 1 2012
Event2012 MRS Spring Meeting - San Francisco, CA, United States
Duration: Apr 9 2012Apr 13 2012

Publication series

NameMaterials Research Society Symposium Proceedings
NumberJanuary
Volume1434
ISSN (Print)0272-9172

Other

Other2012 MRS Spring Meeting
CountryUnited States
CitySan Francisco, CA
Period4/9/124/13/12

Fingerprint

Molecular beam epitaxy
molecular beam epitaxy
volatility
Growth temperature
Doping (additives)
Fluxes
Crystalline materials

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Naito, M., Ueda, S., Takeda, S., Takano, S., & Mitsuda, A. (2012). Molecular beam epitaxy growth of Sr1-xKxFe2As2and Ba1-xKxFe2As2. In J. Shimoyama, E. Hellstrom, M. Putti, K. Matsumoto, & T. Kiss (Eds.), Recent Advances in Superconductors, Novel Compounds and High-TC Materials (January ed., pp. 17-22). (Materials Research Society Symposium Proceedings; Vol. 1434, No. January). Materials Research Society. https://doi.org/10.1557/opl.2012.1317

Molecular beam epitaxy growth of Sr1-xKxFe2As2and Ba1-xKxFe2As2. / Naito, Michio; Ueda, Shinya; Takeda, Soichiro; Takano, Shiro; Mitsuda, Akihiro.

Recent Advances in Superconductors, Novel Compounds and High-TC Materials. ed. / J. Shimoyama; E. Hellstrom; M. Putti; K. Matsumoto; T. Kiss. January. ed. Materials Research Society, 2012. p. 17-22 (Materials Research Society Symposium Proceedings; Vol. 1434, No. January).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Naito, M, Ueda, S, Takeda, S, Takano, S & Mitsuda, A 2012, Molecular beam epitaxy growth of Sr1-xKxFe2As2and Ba1-xKxFe2As2. in J Shimoyama, E Hellstrom, M Putti, K Matsumoto & T Kiss (eds), Recent Advances in Superconductors, Novel Compounds and High-TC Materials. January edn, Materials Research Society Symposium Proceedings, no. January, vol. 1434, Materials Research Society, pp. 17-22, 2012 MRS Spring Meeting, San Francisco, CA, United States, 4/9/12. https://doi.org/10.1557/opl.2012.1317
Naito M, Ueda S, Takeda S, Takano S, Mitsuda A. Molecular beam epitaxy growth of Sr1-xKxFe2As2and Ba1-xKxFe2As2. In Shimoyama J, Hellstrom E, Putti M, Matsumoto K, Kiss T, editors, Recent Advances in Superconductors, Novel Compounds and High-TC Materials. January ed. Materials Research Society. 2012. p. 17-22. (Materials Research Society Symposium Proceedings; January). https://doi.org/10.1557/opl.2012.1317
Naito, Michio ; Ueda, Shinya ; Takeda, Soichiro ; Takano, Shiro ; Mitsuda, Akihiro. / Molecular beam epitaxy growth of Sr1-xKxFe2As2and Ba1-xKxFe2As2. Recent Advances in Superconductors, Novel Compounds and High-TC Materials. editor / J. Shimoyama ; E. Hellstrom ; M. Putti ; K. Matsumoto ; T. Kiss. January. ed. Materials Research Society, 2012. pp. 17-22 (Materials Research Society Symposium Proceedings; January).
@inproceedings{3a4dc47221934149b9da7422b8df6cb4,
title = "Molecular beam epitaxy growth of Sr1-xKxFe2As2and Ba1-xKxFe2As2",
abstract = "Single-crystalline films of superconducting Sr1-xKxFe2As2 and Ba1-xKxFe2As2 were grown by molecular beam epitaxy (MBE). The most crucial problem in MBE growth of these compounds is the high volatility of elemental K. The key to incorporating K into films is low-temperature growth (≤ 350°C) in reduced As flux. We performed a systematic study of the doping dependence of Tc in Ba1-xKxFe2As2 for x = 0.0 to 1.0. The highest Tcon (Tcend) so far attained for Ba1-xKxFe2As2 is 38.3 K (35.5 K) at x ∼ 0.3.",
author = "Michio Naito and Shinya Ueda and Soichiro Takeda and Shiro Takano and Akihiro Mitsuda",
year = "2012",
month = "1",
day = "1",
doi = "10.1557/opl.2012.1317",
language = "English",
series = "Materials Research Society Symposium Proceedings",
publisher = "Materials Research Society",
number = "January",
pages = "17--22",
editor = "J. Shimoyama and E. Hellstrom and M. Putti and K. Matsumoto and T. Kiss",
booktitle = "Recent Advances in Superconductors, Novel Compounds and High-TC Materials",
address = "United States",
edition = "January",

}

TY - GEN

T1 - Molecular beam epitaxy growth of Sr1-xKxFe2As2and Ba1-xKxFe2As2

AU - Naito, Michio

AU - Ueda, Shinya

AU - Takeda, Soichiro

AU - Takano, Shiro

AU - Mitsuda, Akihiro

PY - 2012/1/1

Y1 - 2012/1/1

N2 - Single-crystalline films of superconducting Sr1-xKxFe2As2 and Ba1-xKxFe2As2 were grown by molecular beam epitaxy (MBE). The most crucial problem in MBE growth of these compounds is the high volatility of elemental K. The key to incorporating K into films is low-temperature growth (≤ 350°C) in reduced As flux. We performed a systematic study of the doping dependence of Tc in Ba1-xKxFe2As2 for x = 0.0 to 1.0. The highest Tcon (Tcend) so far attained for Ba1-xKxFe2As2 is 38.3 K (35.5 K) at x ∼ 0.3.

AB - Single-crystalline films of superconducting Sr1-xKxFe2As2 and Ba1-xKxFe2As2 were grown by molecular beam epitaxy (MBE). The most crucial problem in MBE growth of these compounds is the high volatility of elemental K. The key to incorporating K into films is low-temperature growth (≤ 350°C) in reduced As flux. We performed a systematic study of the doping dependence of Tc in Ba1-xKxFe2As2 for x = 0.0 to 1.0. The highest Tcon (Tcend) so far attained for Ba1-xKxFe2As2 is 38.3 K (35.5 K) at x ∼ 0.3.

UR - http://www.scopus.com/inward/record.url?scp=84939129351&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84939129351&partnerID=8YFLogxK

U2 - 10.1557/opl.2012.1317

DO - 10.1557/opl.2012.1317

M3 - Conference contribution

AN - SCOPUS:84939129351

T3 - Materials Research Society Symposium Proceedings

SP - 17

EP - 22

BT - Recent Advances in Superconductors, Novel Compounds and High-TC Materials

A2 - Shimoyama, J.

A2 - Hellstrom, E.

A2 - Putti, M.

A2 - Matsumoto, K.

A2 - Kiss, T.

PB - Materials Research Society

ER -