Molecular beam epitaxy growth of superconducting Ba 1-xK xFe 2As 2 and SmFeAs(O,F) films

Shinya Ueda, Soichiro Takeda, Shiro Takano, Akihiro Mitsuda, Michio Naito

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Abstract

We report the molecular beam epitaxy (MBE) growth of the iron-based superconductors, Ba 1-xK xFe 2As 2 and SmFeAs(O,F). In the growth of Ba 1-xK xFe 2As 2 films, the key to incorporating volatile K in films is low-temperature (≥350°C) growth in reduced As flux. The highest T c thus far obtained is T c on (T c end) = 38.0 K (35.8 K). In the growth of superconducting SmFeAs(O,F), we adopted two methods. In the first method, we first grew pristine SmFeAsO films, and subsequently introduced F into the films by diffusion from an overlayer of SmF 3. In the second method, we grew as-grown superconducting SmFeAs(O,F) films by coevaporating Sm, SmF 3, Fe, and As. Thus far, better results have been obtained by the first F diffusion method. The films prepared by F diffusion showed T c on (T c end) = 56.5K (55.3K), whereas the as-grown films showed T c on (T c end) = 51.5K (48.0K).

Original languageEnglish
Article number010103
JournalJapanese Journal of Applied Physics
Volume51
Issue number1
DOIs
Publication statusPublished - Jan 1 2012

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All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

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