Molecular beam epitaxy growth of superconducting Sr1-xK xFe2As2 and Ba1-xK xFe2As2

Soichiro Takeda, Shinya Ueda, Takeshi Yamagishi, Shinya Agatsuma, Shiro Takano, Akihiro Mitsuda, Michio Naito

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23 Citations (Scopus)

Abstract

We report on the molecular beam epitaxy growth of nonsuperconducting SrFe2As2 and BaFe2As2 and superconducting Sr1-xKxFe2As2 and Ba1-xKxFe2As2 thin films. SrFe 2As2 and BaFe2As2 films were obtained rather easily at the growth temperatures of 540-600 °C, which are not much different from those for GaAs growth. However, superconducting Sr 1-xKxFe2As2 and Ba 1-xKxFe2As2 films cannot be obtained at the same growth temperatures as elemental K is highly volatile. The key to incorporating K into films is low-temperature growth (≤350 °C) in reduced As flux. The resultant films showed good superconducting properties: T onc(Tendendc) = 33.2 K (30.0 K) and 38.3 K (35.5 K) for Sr1-xKxFe2As2 and Ba 1-xKxFe2As2 thin films respectively.

Original languageEnglish
Article number093101
JournalApplied Physics Express
Volume3
Issue number9
DOIs
Publication statusPublished - Sep 1 2010

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

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