Molecular beam epitaxy of high-quality CuI thin films on a low temperature grown buffer layer

S. Inagaki, M. Nakamura, N. Aizawa, L. C. Peng, X. Z. Yu, Y. Tokura, M. Kawasaki

Research output: Contribution to journalArticlepeer-review

19 Citations (Scopus)

Abstract

We show a growth of high-quality thin films of a wide bandgap semiconductor copper iodide (CuI) on Al2O3 substrates by molecular beam epitaxy. Employing a thin buffer layer deposited at a lower temperature (160 °C) prior to the main growth, the maximum growth temperature is elevated up to 240 °C, resulting in a significant improvement in the crystallinity as verified by sharp x-ray diffraction peaks as well as a step-and-terrace structure observed by atomic force microscopy. Optimum films show more intense free exciton emission in photoluminescence spectra than others, implying the suppression of defects. These results indicate that the fabrication process developed in this study is quite effective at realizing high-quality CuI thin films.

Original languageEnglish
Article number192105
JournalApplied Physics Letters
Volume116
Issue number19
DOIs
Publication statusPublished - May 11 2020
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Fingerprint

Dive into the research topics of 'Molecular beam epitaxy of high-quality CuI thin films on a low temperature grown buffer layer'. Together they form a unique fingerprint.

Cite this