Molecular design of hole transport materials for obtaining high durability in organic electroluminescent diodes

Chihaya Adachi, Kazukiyo Nagai, Nozomu Tamoto

Research output: Contribution to journalArticle

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Abstract

The molecular design of hole transport materials (HTMs) for producing high durability in organic layered electroluminescent (EL) diodes was elucidated. The durability tests were examined using fourteen hole transport materials in the cell structure of an anode/hole transport layer (HTL)/emitter layer (EML)/cathode. The ionization potential (Ip) of HTLs was found to be the dominant factor for obtaining high durability in organic EL devices. The formation of the small energy barrier at the interface of a HTL/anode was required for high durability. Moreover, no straightforward relations between melting point, glass transition temperature of the HTMs, and durability of the EL devices were observed. The EL device using the HTM having a low Ip (5.08 eV) showed an especially remarkable stability. In this case, the half-life period of the initial luminance was beyond 500 h.

Original languageEnglish
Number of pages1
JournalApplied Physics Letters
Publication statusPublished - Dec 1 1995

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durability
diodes
ionization potentials
anodes
luminance
half life
glass transition temperature
melting points
emitters
cathodes
cells

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

Molecular design of hole transport materials for obtaining high durability in organic electroluminescent diodes. / Adachi, Chihaya; Nagai, Kazukiyo; Tamoto, Nozomu.

In: Applied Physics Letters, 01.12.1995.

Research output: Contribution to journalArticle

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