Molecular dynamics analysis of point defects in silicon near solid-liquid interface

Koichi Kakimoto, T. Umehara, H. Ozoe

Research output: Contribution to journalConference article

3 Citations (Scopus)

Abstract

Molecular dynamics simulation was carried out to clarify pressure effects on diffusion constants of point defects such as a vacancy and an interstitial atom under constant pressure by using Stillinger-Weber potential. The calculated results indicate that the pressure effect on diffusion of the point defects is small during single crystal growth of silicon, since stress. which was obtained by a global heat and mass transfer model is not enough to modify migration process of the point defects. Activation energy of a vacancy and an interstitial atom was obtained as a function of external pressure.

Original languageEnglish
Pages (from-to)387-391
Number of pages5
JournalApplied Surface Science
Volume159
DOIs
Publication statusPublished - Jan 1 2000
Event3rd International Symposium on the Control of Semiconductor Interfaces (ISCSI-3) - Karuizawa, Jpn
Duration: Oct 25 1999Oct 29 1999

Fingerprint

Silicon
Point defects
Dynamic analysis
Molecular dynamics
Pressure effects
Vacancies
Liquids
Atoms
Crystallization
Crystal growth
Mass transfer
Activation energy
Single crystals
Heat transfer
Computer simulation

All Science Journal Classification (ASJC) codes

  • Surfaces, Coatings and Films

Cite this

Molecular dynamics analysis of point defects in silicon near solid-liquid interface. / Kakimoto, Koichi; Umehara, T.; Ozoe, H.

In: Applied Surface Science, Vol. 159, 01.01.2000, p. 387-391.

Research output: Contribution to journalConference article

@article{94453f50757b491fb342e3dc940b99fd,
title = "Molecular dynamics analysis of point defects in silicon near solid-liquid interface",
abstract = "Molecular dynamics simulation was carried out to clarify pressure effects on diffusion constants of point defects such as a vacancy and an interstitial atom under constant pressure by using Stillinger-Weber potential. The calculated results indicate that the pressure effect on diffusion of the point defects is small during single crystal growth of silicon, since stress. which was obtained by a global heat and mass transfer model is not enough to modify migration process of the point defects. Activation energy of a vacancy and an interstitial atom was obtained as a function of external pressure.",
author = "Koichi Kakimoto and T. Umehara and H. Ozoe",
year = "2000",
month = "1",
day = "1",
doi = "10.1016/S0169-4332(00)00121-5",
language = "English",
volume = "159",
pages = "387--391",
journal = "Applied Surface Science",
issn = "0169-4332",
publisher = "Elsevier",

}

TY - JOUR

T1 - Molecular dynamics analysis of point defects in silicon near solid-liquid interface

AU - Kakimoto, Koichi

AU - Umehara, T.

AU - Ozoe, H.

PY - 2000/1/1

Y1 - 2000/1/1

N2 - Molecular dynamics simulation was carried out to clarify pressure effects on diffusion constants of point defects such as a vacancy and an interstitial atom under constant pressure by using Stillinger-Weber potential. The calculated results indicate that the pressure effect on diffusion of the point defects is small during single crystal growth of silicon, since stress. which was obtained by a global heat and mass transfer model is not enough to modify migration process of the point defects. Activation energy of a vacancy and an interstitial atom was obtained as a function of external pressure.

AB - Molecular dynamics simulation was carried out to clarify pressure effects on diffusion constants of point defects such as a vacancy and an interstitial atom under constant pressure by using Stillinger-Weber potential. The calculated results indicate that the pressure effect on diffusion of the point defects is small during single crystal growth of silicon, since stress. which was obtained by a global heat and mass transfer model is not enough to modify migration process of the point defects. Activation energy of a vacancy and an interstitial atom was obtained as a function of external pressure.

UR - http://www.scopus.com/inward/record.url?scp=0034205183&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0034205183&partnerID=8YFLogxK

U2 - 10.1016/S0169-4332(00)00121-5

DO - 10.1016/S0169-4332(00)00121-5

M3 - Conference article

AN - SCOPUS:0034205183

VL - 159

SP - 387

EP - 391

JO - Applied Surface Science

JF - Applied Surface Science

SN - 0169-4332

ER -