Molecular dynamics analysis of point defects in silicon near solid-liquid interface

K. Kakimoto, T. Umehara, H. Ozoe

Research output: Contribution to journalConference article

3 Citations (Scopus)

Abstract

Molecular dynamics simulation was carried out to clarify pressure effects on diffusion constants of point defects such as a vacancy and an interstitial atom under constant pressure by using Stillinger-Weber potential. The calculated results indicate that the pressure effect on diffusion of the point defects is small during single crystal growth of silicon, since stress. which was obtained by a global heat and mass transfer model is not enough to modify migration process of the point defects. Activation energy of a vacancy and an interstitial atom was obtained as a function of external pressure.

Original languageEnglish
Pages (from-to)387-391
Number of pages5
JournalApplied Surface Science
Volume159
DOIs
Publication statusPublished - Jun 2000
Event3rd International Symposium on the Control of Semiconductor Interfaces (ISCSI-3) - Karuizawa, Jpn
Duration: Oct 25 1999Oct 29 1999

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All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Condensed Matter Physics
  • Physics and Astronomy(all)
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

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