TY - JOUR
T1 - Molecular dynamics analysis of point defects in silicon near solid-liquid interface
AU - Kakimoto, K.
AU - Umehara, T.
AU - Ozoe, H.
N1 - Funding Information:
This work was conducted as JSPS Research for the Future Program in the Area of Atomic-Scale Surface and Interface Dynamics. The New Energy and Industrial Technology Development Organization (NEDO) through the Japan Space Utilization Promotion Center (JSUP) supported a part of this work. This work was partially carried out under the support of Grant-in-Aid to the Science Research by the Ministry of Education, Science and Culture.
PY - 2000/6
Y1 - 2000/6
N2 - Molecular dynamics simulation was carried out to clarify pressure effects on diffusion constants of point defects such as a vacancy and an interstitial atom under constant pressure by using Stillinger-Weber potential. The calculated results indicate that the pressure effect on diffusion of the point defects is small during single crystal growth of silicon, since stress. which was obtained by a global heat and mass transfer model is not enough to modify migration process of the point defects. Activation energy of a vacancy and an interstitial atom was obtained as a function of external pressure.
AB - Molecular dynamics simulation was carried out to clarify pressure effects on diffusion constants of point defects such as a vacancy and an interstitial atom under constant pressure by using Stillinger-Weber potential. The calculated results indicate that the pressure effect on diffusion of the point defects is small during single crystal growth of silicon, since stress. which was obtained by a global heat and mass transfer model is not enough to modify migration process of the point defects. Activation energy of a vacancy and an interstitial atom was obtained as a function of external pressure.
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U2 - 10.1016/S0169-4332(00)00121-5
DO - 10.1016/S0169-4332(00)00121-5
M3 - Conference article
AN - SCOPUS:0034205183
SN - 0169-4332
VL - 159
SP - 387
EP - 391
JO - Applied Surface Science
JF - Applied Surface Science
T2 - 3rd International Symposium on the Control of Semiconductor Interfaces (ISCSI-3)
Y2 - 25 October 1999 through 29 October 1999
ER -