Molecular-dynamics analysis of the nucleation and crystallization process of Si

Byoung Min Lee, Hong Koo Baik, Baek Seok Seong, Shinji Munetoh, Teruaki Motooka

Research output: Contribution to journalArticle

8 Citations (Scopus)

Abstract

Molecular-dynamics (MD) simulations of excimer-laser annealed Si using the Tersoff potential have been performed and the processes of the nucleation and crystallization of Si are monitored by the order parameter for each atom. The order parameter which identifies each atom belonging to the crystalline phase in amorphous and liquid-like environment is presented by a four-body correlation function. The simulation results show that the atomistic processes of the nucleation and crystallization of Si on crystalline Si (c-Si) substrates can be divided into several stages. Twins with low formation energy disturb the further crystallization of nucleus along the [1 1 1] direction.

Original languageEnglish
Pages (from-to)266-271
Number of pages6
JournalPhysica B: Condensed Matter
Volume392
Issue number1-2
DOIs
Publication statusPublished - Apr 15 2007

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Crystallization
Dynamic analysis
Molecular dynamics
Nucleation
nucleation
crystallization
molecular dynamics
Crystalline materials
Atoms
Excimer lasers
energy of formation
excimer lasers
atoms
simulation
nuclei
Computer simulation
Liquids
Substrates
liquids

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

Cite this

Molecular-dynamics analysis of the nucleation and crystallization process of Si. / Lee, Byoung Min; Baik, Hong Koo; Seong, Baek Seok; Munetoh, Shinji; Motooka, Teruaki.

In: Physica B: Condensed Matter, Vol. 392, No. 1-2, 15.04.2007, p. 266-271.

Research output: Contribution to journalArticle

Lee, Byoung Min ; Baik, Hong Koo ; Seong, Baek Seok ; Munetoh, Shinji ; Motooka, Teruaki. / Molecular-dynamics analysis of the nucleation and crystallization process of Si. In: Physica B: Condensed Matter. 2007 ; Vol. 392, No. 1-2. pp. 266-271.
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