Molecular dynamics simulation of diffusion behavior of N atoms on the growth surface in GaN solution growth

Takahiro Kawamura, Yoshihiro Kangawa, Koichi Kakimoto, Yasuyuki Suzuki

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

In this study, we simulated the solution growth of gallium nitride (GaN) and investigated the diffusion behavior of nitrogen (N) atoms on growth surfaces by molecular dynamics simulation. The simulation showed that the Ga-face grew flatter than the N-face. Comparing the diffusion coefficients of a N atom on Ga- and N-faces, the values on the Ga-face were about 3.5 times larger than those on the N-face.

Original languageEnglish
Pages (from-to)32-36
Number of pages5
JournalJournal of Crystal Growth
Volume351
Issue number1
DOIs
Publication statusPublished - Jul 15 2012

    Fingerprint

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

Cite this