Molecular Dynamics Simulations of Nucleation and Crystallization Processes During Excimer-Laser Annealing of Amorphous Silicon on Glass

T. Motooka, S. Munetoh, Lee Byoung Min, K. Nisihira

    Research output: Contribution to journalConference articlepeer-review

    Abstract

    We have investigated atomistic processes of nucleation and crystallization in excimer-laser annealed thin Si films on glass based on molecular-dynamics (MD) simulations using the Tersoff potential. MD cells composed of up to approximately 50000 Si atoms were heated to produce melted Si, and then melted Si was quenched under various supercooled conditions with or without a temperature gradient and the corresponding nucleation processes were visualized. Lateral growth of thin Si crystalline films was also simulated by embedding a crystalline nano-particle with various crystal surfaces in melted Si. It has been found that the crystal surfaces become predominantly {111} during the lateral growth processes.

    Original languageEnglish
    Pages (from-to)59-64
    Number of pages6
    JournalMaterials Research Society Symposium - Proceedings
    Volume780
    DOIs
    Publication statusPublished - 2003
    EventMATERIALS RESEARCH SOCIETY SYMPOSIUM - PROCEEDINGS: Advanced Optical Processing of Materials - San Francisco, CA, United States
    Duration: Apr 22 2003Apr 23 2003

    All Science Journal Classification (ASJC) codes

    • Materials Science(all)
    • Condensed Matter Physics
    • Mechanics of Materials
    • Mechanical Engineering

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