Molecular-dynamics simulations of nucleation and crystallization processes of laser crystallized poly-Si

Byoung Min Lee, Teruaki Motooka, Shinji Munetoh

Research output: Contribution to journalArticle

7 Citations (Scopus)

Abstract

The nucleation and crystallization processes of excimer-laser annealed Si on a SiO2 substrate for complete melting conditions have been investigated by using molecular-dynamics simulations. In the early stage of nucleation, the preferential growth of nuclei with a {111} face normal to the surface was originated from the {111} twin boundaries with a low surface energy. The partial rotation of the dimer leads to the growth of {111}-oriented nuclei along twins that have different stacking sequences. The recombination of vacancies and dimers at the solidification front is directly related to {111} growth from the twin boundaries.

Original languageEnglish
Article number055205
JournalJournal of Physics Condensed Matter
Volume20
Issue number5
DOIs
Publication statusPublished - Feb 6 2008

Fingerprint

Crystallization
Polysilicon
Molecular dynamics
Nucleation
nucleation
crystallization
molecular dynamics
Dimers
Lasers
Computer simulation
dimers
lasers
nuclei
simulation
Excimer lasers
Interfacial energy
excimer lasers
solidification
surface energy
Vacancies

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics

Cite this

Molecular-dynamics simulations of nucleation and crystallization processes of laser crystallized poly-Si. / Lee, Byoung Min; Motooka, Teruaki; Munetoh, Shinji.

In: Journal of Physics Condensed Matter, Vol. 20, No. 5, 055205, 06.02.2008.

Research output: Contribution to journalArticle

@article{36619cb1a9bf48888e2c38ab547aeafc,
title = "Molecular-dynamics simulations of nucleation and crystallization processes of laser crystallized poly-Si",
abstract = "The nucleation and crystallization processes of excimer-laser annealed Si on a SiO2 substrate for complete melting conditions have been investigated by using molecular-dynamics simulations. In the early stage of nucleation, the preferential growth of nuclei with a {111} face normal to the surface was originated from the {111} twin boundaries with a low surface energy. The partial rotation of the dimer leads to the growth of {111}-oriented nuclei along twins that have different stacking sequences. The recombination of vacancies and dimers at the solidification front is directly related to {111} growth from the twin boundaries.",
author = "Lee, {Byoung Min} and Teruaki Motooka and Shinji Munetoh",
year = "2008",
month = "2",
day = "6",
doi = "10.1088/0953-8984/20/05/055205",
language = "English",
volume = "20",
journal = "Journal of Physics Condensed Matter",
issn = "0953-8984",
publisher = "IOP Publishing Ltd.",
number = "5",

}

TY - JOUR

T1 - Molecular-dynamics simulations of nucleation and crystallization processes of laser crystallized poly-Si

AU - Lee, Byoung Min

AU - Motooka, Teruaki

AU - Munetoh, Shinji

PY - 2008/2/6

Y1 - 2008/2/6

N2 - The nucleation and crystallization processes of excimer-laser annealed Si on a SiO2 substrate for complete melting conditions have been investigated by using molecular-dynamics simulations. In the early stage of nucleation, the preferential growth of nuclei with a {111} face normal to the surface was originated from the {111} twin boundaries with a low surface energy. The partial rotation of the dimer leads to the growth of {111}-oriented nuclei along twins that have different stacking sequences. The recombination of vacancies and dimers at the solidification front is directly related to {111} growth from the twin boundaries.

AB - The nucleation and crystallization processes of excimer-laser annealed Si on a SiO2 substrate for complete melting conditions have been investigated by using molecular-dynamics simulations. In the early stage of nucleation, the preferential growth of nuclei with a {111} face normal to the surface was originated from the {111} twin boundaries with a low surface energy. The partial rotation of the dimer leads to the growth of {111}-oriented nuclei along twins that have different stacking sequences. The recombination of vacancies and dimers at the solidification front is directly related to {111} growth from the twin boundaries.

UR - http://www.scopus.com/inward/record.url?scp=43049102064&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=43049102064&partnerID=8YFLogxK

U2 - 10.1088/0953-8984/20/05/055205

DO - 10.1088/0953-8984/20/05/055205

M3 - Article

AN - SCOPUS:43049102064

VL - 20

JO - Journal of Physics Condensed Matter

JF - Journal of Physics Condensed Matter

SN - 0953-8984

IS - 5

M1 - 055205

ER -