Molecular-dynamics simulations of nucleation and crystallization processes of laser crystallized poly-Si

Byoung Min Lee, Teruaki Motooka, Shinji Munetoh

Research output: Contribution to journalArticle

7 Citations (Scopus)

Abstract

The nucleation and crystallization processes of excimer-laser annealed Si on a SiO2 substrate for complete melting conditions have been investigated by using molecular-dynamics simulations. In the early stage of nucleation, the preferential growth of nuclei with a {111} face normal to the surface was originated from the {111} twin boundaries with a low surface energy. The partial rotation of the dimer leads to the growth of {111}-oriented nuclei along twins that have different stacking sequences. The recombination of vacancies and dimers at the solidification front is directly related to {111} growth from the twin boundaries.

Original languageEnglish
Article number055205
JournalJournal of Physics Condensed Matter
Volume20
Issue number5
DOIs
Publication statusPublished - Feb 6 2008

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics

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