Molecular-dynamics simulations of nucleation and growth of crystalline Si films during ELA processes

T. Endo, T. Warabisako, Shinji Munetoh, T. Motooka

Research output: Contribution to conferencePaper

Abstract

Initial stage of the nucleation and growth of crystallizing Si in a rapid cooling process like ELA is discussed by using molecular-dynamics simulations. A new simulation technique is introduced to exclude artificial temperature control and to realize pseudo-natural cooling conditions, which enables us to visualize the behavior of Si atoms under a more natural condition. Based on a statistical analysis of the atomic movements, it is suggested that Si nucleation and growth occur in an amorphous-like or a low-density liquid phase rather than the supercooled liquid as has been generally accepted so far.

Original languageEnglish
Pages969-972
Number of pages4
Publication statusPublished - Dec 1 2005
EventIDW/AD'05 - 12th International Display Workshops in Conjunction with Asia Display 2005 - Takamatsu, Japan
Duration: Dec 6 2005Dec 9 2005

Other

OtherIDW/AD'05 - 12th International Display Workshops in Conjunction with Asia Display 2005
CountryJapan
CityTakamatsu
Period12/6/0512/9/05

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All Science Journal Classification (ASJC) codes

  • Engineering(all)

Cite this

Endo, T., Warabisako, T., Munetoh, S., & Motooka, T. (2005). Molecular-dynamics simulations of nucleation and growth of crystalline Si films during ELA processes. 969-972. Paper presented at IDW/AD'05 - 12th International Display Workshops in Conjunction with Asia Display 2005, Takamatsu, Japan.