Initial stage of the nucleation and growth of crystallizing Si in a rapid cooling process like ELA is discussed by using molecular-dynamics simulations. A new simulation technique is introduced to exclude artificial temperature control and to realize pseudo-natural cooling conditions, which enables us to visualize the behavior of Si atoms under a more natural condition. Based on a statistical analysis of the atomic movements, it is suggested that Si nucleation and growth occur in an amorphous-like or a low-density liquid phase rather than the supercooled liquid as has been generally accepted so far.
|Number of pages||4|
|Publication status||Published - Dec 1 2005|
|Event||IDW/AD'05 - 12th International Display Workshops in Conjunction with Asia Display 2005 - Takamatsu, Japan|
Duration: Dec 6 2005 → Dec 9 2005
|Other||IDW/AD'05 - 12th International Display Workshops in Conjunction with Asia Display 2005|
|Period||12/6/05 → 12/9/05|
All Science Journal Classification (ASJC) codes