Molecular dynamics simulations of solid-phase epitaxy of Si: Defect formation processes

Shinji Munetoh, Koji Moriguchi, Akira Shintani, Ken Nishihira, Teruaki Motooka

Research output: Contribution to journalArticle

17 Citations (Scopus)

Abstract

We have investigated defect formation processes during solid-phase epitaxy of Si in the [001] direction based on molecular dynamics (MD) simulations using the Tersoff potential. Two different types of defect formation processes have been successfully observed in the MD simulations. They can be characterized by the structure of Si-Si dimer bonds created at the amorphous/crystalline interface in the initial stage of the defect formation. In the first type, the Si-Si dimer bonds form coupled dimer lines and these coupled dimer lines lead to the creation of 111 stacking faults. In the second type, the Si-Si dimer bonds form a single dimer line which leads to the creation of [111] twins.

Original languageEnglish
Article number193314
Pages (from-to)1933141-1933144
Number of pages4
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume64
Issue number19
DOIs
Publication statusPublished - Nov 15 2001

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Fingerprint Dive into the research topics of 'Molecular dynamics simulations of solid-phase epitaxy of Si: Defect formation processes'. Together they form a unique fingerprint.

  • Cite this