Molecular dynamics simulations of solid-phase epitaxy of Si: Defect formation processes

Shinji Munetoh, Koji Moriguchi, Akira Shintani, Ken Nishihira, Teruaki Motooka

Research output: Contribution to journalArticle

17 Citations (Scopus)

Abstract

We have investigated defect formation processes during solid-phase epitaxy of Si in the [001] direction based on molecular dynamics (MD) simulations using the Tersoff potential. Two different types of defect formation processes have been successfully observed in the MD simulations. They can be characterized by the structure of Si-Si dimer bonds created at the amorphous/crystalline interface in the initial stage of the defect formation. In the first type, the Si-Si dimer bonds form coupled dimer lines and these coupled dimer lines lead to the creation of 111 stacking faults. In the second type, the Si-Si dimer bonds form a single dimer line which leads to the creation of [111] twins.

Original languageEnglish
Article number193314
Pages (from-to)1933141-1933144
Number of pages4
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume64
Issue number19
Publication statusPublished - Nov 15 2001
Externally publishedYes

Fingerprint

Epitaxial growth
Dimers
epitaxy
Molecular dynamics
solid phases
dimers
molecular dynamics
Defects
defects
Computer simulation
simulation
Stacking faults
crystal defects
Crystalline materials

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

Munetoh, S., Moriguchi, K., Shintani, A., Nishihira, K., & Motooka, T. (2001). Molecular dynamics simulations of solid-phase epitaxy of Si: Defect formation processes. Physical Review B - Condensed Matter and Materials Physics, 64(19), 1933141-1933144. [193314].

Molecular dynamics simulations of solid-phase epitaxy of Si : Defect formation processes. / Munetoh, Shinji; Moriguchi, Koji; Shintani, Akira; Nishihira, Ken; Motooka, Teruaki.

In: Physical Review B - Condensed Matter and Materials Physics, Vol. 64, No. 19, 193314, 15.11.2001, p. 1933141-1933144.

Research output: Contribution to journalArticle

Munetoh, S, Moriguchi, K, Shintani, A, Nishihira, K & Motooka, T 2001, 'Molecular dynamics simulations of solid-phase epitaxy of Si: Defect formation processes', Physical Review B - Condensed Matter and Materials Physics, vol. 64, no. 19, 193314, pp. 1933141-1933144.
Munetoh, Shinji ; Moriguchi, Koji ; Shintani, Akira ; Nishihira, Ken ; Motooka, Teruaki. / Molecular dynamics simulations of solid-phase epitaxy of Si : Defect formation processes. In: Physical Review B - Condensed Matter and Materials Physics. 2001 ; Vol. 64, No. 19. pp. 1933141-1933144.
@article{f6d27f2479a3400bbe9755eff2e6325c,
title = "Molecular dynamics simulations of solid-phase epitaxy of Si: Defect formation processes",
abstract = "We have investigated defect formation processes during solid-phase epitaxy of Si in the [001] direction based on molecular dynamics (MD) simulations using the Tersoff potential. Two different types of defect formation processes have been successfully observed in the MD simulations. They can be characterized by the structure of Si-Si dimer bonds created at the amorphous/crystalline interface in the initial stage of the defect formation. In the first type, the Si-Si dimer bonds form coupled dimer lines and these coupled dimer lines lead to the creation of 111 stacking faults. In the second type, the Si-Si dimer bonds form a single dimer line which leads to the creation of [111] twins.",
author = "Shinji Munetoh and Koji Moriguchi and Akira Shintani and Ken Nishihira and Teruaki Motooka",
year = "2001",
month = "11",
day = "15",
language = "English",
volume = "64",
pages = "1933141--1933144",
journal = "Physical Review B - Condensed Matter and Materials Physics",
issn = "1098-0121",
publisher = "American Physical Society",
number = "19",

}

TY - JOUR

T1 - Molecular dynamics simulations of solid-phase epitaxy of Si

T2 - Defect formation processes

AU - Munetoh, Shinji

AU - Moriguchi, Koji

AU - Shintani, Akira

AU - Nishihira, Ken

AU - Motooka, Teruaki

PY - 2001/11/15

Y1 - 2001/11/15

N2 - We have investigated defect formation processes during solid-phase epitaxy of Si in the [001] direction based on molecular dynamics (MD) simulations using the Tersoff potential. Two different types of defect formation processes have been successfully observed in the MD simulations. They can be characterized by the structure of Si-Si dimer bonds created at the amorphous/crystalline interface in the initial stage of the defect formation. In the first type, the Si-Si dimer bonds form coupled dimer lines and these coupled dimer lines lead to the creation of 111 stacking faults. In the second type, the Si-Si dimer bonds form a single dimer line which leads to the creation of [111] twins.

AB - We have investigated defect formation processes during solid-phase epitaxy of Si in the [001] direction based on molecular dynamics (MD) simulations using the Tersoff potential. Two different types of defect formation processes have been successfully observed in the MD simulations. They can be characterized by the structure of Si-Si dimer bonds created at the amorphous/crystalline interface in the initial stage of the defect formation. In the first type, the Si-Si dimer bonds form coupled dimer lines and these coupled dimer lines lead to the creation of 111 stacking faults. In the second type, the Si-Si dimer bonds form a single dimer line which leads to the creation of [111] twins.

UR - http://www.scopus.com/inward/record.url?scp=0035891023&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0035891023&partnerID=8YFLogxK

M3 - Article

AN - SCOPUS:0035891023

VL - 64

SP - 1933141

EP - 1933144

JO - Physical Review B - Condensed Matter and Materials Physics

JF - Physical Review B - Condensed Matter and Materials Physics

SN - 1098-0121

IS - 19

M1 - 193314

ER -