Abstract
We have performed molecular-dynamics calculations to examine defect-formation processes in silicon grown from the melt based on the ordinary Langevin equation employing the Tersoff interatomic potential. Our simulations indicated that hexagonal structures are formed near the solid-liquid interfaces and these regions give rise to microfacets composed of primarily (111)\ planes. Most of these hexagonal configurations were annihilated during further crystal growth, but a part of them were left, which resulted in defect formation with five- and seven-member rings.
| Original language | English |
|---|---|
| Pages (from-to) | 12583-12586 |
| Number of pages | 4 |
| Journal | Physical Review B - Condensed Matter and Materials Physics |
| Volume | 58 |
| Issue number | 19 |
| DOIs | |
| Publication status | Published - Jan 1 1998 |
Fingerprint
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
Cite this
Molecular-dynamics studies on defect-formation processes during crystal growth of silicon from melt. / Ishimaru, Manabu; Munetoh, Shinji; Motooka, Teruaki; Moriguchi, Koji; Shintani, Akira.
In: Physical Review B - Condensed Matter and Materials Physics, Vol. 58, No. 19, 01.01.1998, p. 12583-12586.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Molecular-dynamics studies on defect-formation processes during crystal growth of silicon from melt
AU - Ishimaru, Manabu
AU - Munetoh, Shinji
AU - Motooka, Teruaki
AU - Moriguchi, Koji
AU - Shintani, Akira
PY - 1998/1/1
Y1 - 1998/1/1
N2 - We have performed molecular-dynamics calculations to examine defect-formation processes in silicon grown from the melt based on the ordinary Langevin equation employing the Tersoff interatomic potential. Our simulations indicated that hexagonal structures are formed near the solid-liquid interfaces and these regions give rise to microfacets composed of primarily (111)\ planes. Most of these hexagonal configurations were annihilated during further crystal growth, but a part of them were left, which resulted in defect formation with five- and seven-member rings.
AB - We have performed molecular-dynamics calculations to examine defect-formation processes in silicon grown from the melt based on the ordinary Langevin equation employing the Tersoff interatomic potential. Our simulations indicated that hexagonal structures are formed near the solid-liquid interfaces and these regions give rise to microfacets composed of primarily (111)\ planes. Most of these hexagonal configurations were annihilated during further crystal growth, but a part of them were left, which resulted in defect formation with five- and seven-member rings.
UR - http://www.scopus.com/inward/record.url?scp=0000194184&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0000194184&partnerID=8YFLogxK
U2 - 10.1103/PhysRevB.58.12583
DO - 10.1103/PhysRevB.58.12583
M3 - Article
AN - SCOPUS:0000194184
VL - 58
SP - 12583
EP - 12586
JO - Physical Review B - Condensed Matter and Materials Physics
JF - Physical Review B - Condensed Matter and Materials Physics
SN - 1098-0121
IS - 19
ER -