We have performed molecular-dynamics calculations to examine defect-formation processes in silicon grown from the melt based on the ordinary Langevin equation employing the Tersoff interatomic potential. Our simulations indicated that hexagonal structures are formed near the solid-liquid interfaces and these regions give rise to microfacets composed of primarily (111)\ planes. Most of these hexagonal configurations were annihilated during further crystal growth, but a part of them were left, which resulted in defect formation with five- and seven-member rings.
|Number of pages||4|
|Journal||Physical Review B - Condensed Matter and Materials Physics|
|Publication status||Published - Jan 1 1998|
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics