TY - JOUR
T1 - Molecular-dynamics studies on defect-formation processes during crystal growth of silicon from melt
AU - Ishimaru, Manabu
AU - Munetoh, Shinji
AU - Motooka, Teruaki
AU - Moriguchi, Koji
AU - Shintani, Akira
PY - 1998/1/1
Y1 - 1998/1/1
N2 - We have performed molecular-dynamics calculations to examine defect-formation processes in silicon grown from the melt based on the ordinary Langevin equation employing the Tersoff interatomic potential. Our simulations indicated that hexagonal structures are formed near the solid-liquid interfaces and these regions give rise to microfacets composed of primarily (111)\ planes. Most of these hexagonal configurations were annihilated during further crystal growth, but a part of them were left, which resulted in defect formation with five- and seven-member rings.
AB - We have performed molecular-dynamics calculations to examine defect-formation processes in silicon grown from the melt based on the ordinary Langevin equation employing the Tersoff interatomic potential. Our simulations indicated that hexagonal structures are formed near the solid-liquid interfaces and these regions give rise to microfacets composed of primarily (111)\ planes. Most of these hexagonal configurations were annihilated during further crystal growth, but a part of them were left, which resulted in defect formation with five- and seven-member rings.
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U2 - 10.1103/PhysRevB.58.12583
DO - 10.1103/PhysRevB.58.12583
M3 - Article
AN - SCOPUS:0000194184
VL - 58
SP - 12583
EP - 12586
JO - Physical Review B - Condensed Matter and Materials Physics
JF - Physical Review B - Condensed Matter and Materials Physics
SN - 1098-0121
IS - 19
ER -