Molecular-dynamics studies on defect-formation processes during crystal growth of silicon from melt

Manabu Ishimaru, Shinji Munetoh, Teruaki Motooka, Koji Moriguchi, Akira Shintani

Research output: Contribution to journalArticle

28 Citations (Scopus)

Abstract

We have performed molecular-dynamics calculations to examine defect-formation processes in silicon grown from the melt based on the ordinary Langevin equation employing the Tersoff interatomic potential. Our simulations indicated that hexagonal structures are formed near the solid-liquid interfaces and these regions give rise to microfacets composed of primarily (111)\ planes. Most of these hexagonal configurations were annihilated during further crystal growth, but a part of them were left, which resulted in defect formation with five- and seven-member rings.

Original languageEnglish
Pages (from-to)12583-12586
Number of pages4
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume58
Issue number19
DOIs
Publication statusPublished - Jan 1 1998

Fingerprint

Silicon
Crystallization
Crystal growth
Molecular dynamics
crystal growth
molecular dynamics
Defects
defects
silicon
liquid-solid interfaces
rings
Liquids
configurations
simulation

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

Molecular-dynamics studies on defect-formation processes during crystal growth of silicon from melt. / Ishimaru, Manabu; Munetoh, Shinji; Motooka, Teruaki; Moriguchi, Koji; Shintani, Akira.

In: Physical Review B - Condensed Matter and Materials Physics, Vol. 58, No. 19, 01.01.1998, p. 12583-12586.

Research output: Contribution to journalArticle

Ishimaru, Manabu ; Munetoh, Shinji ; Motooka, Teruaki ; Moriguchi, Koji ; Shintani, Akira. / Molecular-dynamics studies on defect-formation processes during crystal growth of silicon from melt. In: Physical Review B - Condensed Matter and Materials Physics. 1998 ; Vol. 58, No. 19. pp. 12583-12586.
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