Molecular-dynamics studies on defect-formation processes during crystal growth of silicon from melt

Manabu Ishimaru, Shinji Munetoh, Teruaki Motooka, Koji Moriguchi, Akira Shintani

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    29 Citations (Scopus)

    Abstract

    We have performed molecular-dynamics calculations to examine defect-formation processes in silicon grown from the melt based on the ordinary Langevin equation employing the Tersoff interatomic potential. Our simulations indicated that hexagonal structures are formed near the solid-liquid interfaces and these regions give rise to microfacets composed of primarily (111)\ planes. Most of these hexagonal configurations were annihilated during further crystal growth, but a part of them were left, which resulted in defect formation with five- and seven-member rings.

    Original languageEnglish
    Pages (from-to)12583-12586
    Number of pages4
    JournalPhysical Review B - Condensed Matter and Materials Physics
    Volume58
    Issue number19
    DOIs
    Publication statusPublished - Jan 1 1998

    All Science Journal Classification (ASJC) codes

    • Electronic, Optical and Magnetic Materials
    • Condensed Matter Physics

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