Molecular-dynamics studies on solid phase epitaxy of guest-free silicon clathrates

Shinji Munetoh, Koji Moriguchi, Teruaki Motooka, Kazuhito Kamei

Research output: Contribution to journalArticle

Abstract

Dynamical phenomena during the solid phase epitaxy (SPE) of guest-free Si clathrates (Si34 and Si46) via molecular-dynamics (MD) simulations using the Tersoff potential have been reported. The activation energy of SPE for Si34 has been found to correspond with the experimental value for the cubic diamond phase (c-Si; approximately 2.7eV), while the SPE rates of Si46 are much lower than that of c-Si. The structural transition from Si46 (type-I) to Si34 (type-II) can be also observed during the Si46 [001] SPE. The present results suggest that it is worthwhile to intensify experimental studies concerning crystal growth techniques of clathrate materials and these interesting Si forms may open up a new field in "silicon technologies".

Original languageEnglish
Pages (from-to)457-462
Number of pages6
JournalMaterials Research Society Symposium - Proceedings
Volume691
Publication statusPublished - Jan 1 2002

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clathrates
Silicon
Epitaxial growth
epitaxy
Molecular dynamics
solid phases
molecular dynamics
silicon
Diamond
Crystallization
Crystal growth
crystal growth
Diamonds
Activation energy
diamonds
activation energy
Computer simulation
simulation

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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Molecular-dynamics studies on solid phase epitaxy of guest-free silicon clathrates. / Munetoh, Shinji; Moriguchi, Koji; Motooka, Teruaki; Kamei, Kazuhito.

In: Materials Research Society Symposium - Proceedings, Vol. 691, 01.01.2002, p. 457-462.

Research output: Contribution to journalArticle

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