Molecular dynamics study of velocity distribution and local temperature change during rapid cooling processes in excimer-laser annealed silicon

Byoung Min Lee; Shinji Munetoh; Teruaki Motooka

doi:10.1016/j.commatsci.2006.01.017

Molecular dynamics study of velocity distribution and local temperature change during rapid cooling processes in excimer-laser annealed silicon

Byoung Min Lee, Shinji Munetoh, Teruaki Motooka

Advanced Materials Physics

Research output: Contribution to journal › Article

15 Citations (Scopus)

Abstract

Molecular dynamics (MD) simulations have been performed to investigate velocity distribution of atoms and local temperature changes during rapid cooling processes in excimer-laser annealed Si. The interatomic forces were calculated using the Tersoff potential, and the rapid cooling processes were simulated by determining the atomic movements with a combination of Langevin and Newton equations using a MD cell with the size of 48.9 × 48.9 × 97.8 Å³. The local velocity distribution during rapid cooling processes was found to be the Maxwell-Boltzmann type, and the steady-state temperature distribution was obtained within 100 ps.

Original language	English
Pages (from-to)	198-202
Number of pages	5
Journal	Computational Materials Science
Volume	37
Issue number	3
DOIs	https://doi.org/10.1016/j.commatsci.2006.01.017
Publication status	Published - Sep 1 2006

All Science Journal Classification (ASJC) codes

Computer Science(all)
Chemistry(all)
Materials Science(all)
Mechanics of Materials
Physics and Astronomy(all)
Computational Mathematics

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Lee, B. M., Munetoh, S., & Motooka, T. (2006). Molecular dynamics study of velocity distribution and local temperature change during rapid cooling processes in excimer-laser annealed silicon. Computational Materials Science, 37(3), 198-202. https://doi.org/10.1016/j.commatsci.2006.01.017

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AB - Molecular dynamics (MD) simulations have been performed to investigate velocity distribution of atoms and local temperature changes during rapid cooling processes in excimer-laser annealed Si. The interatomic forces were calculated using the Tersoff potential, and the rapid cooling processes were simulated by determining the atomic movements with a combination of Langevin and Newton equations using a MD cell with the size of 48.9 × 48.9 × 97.8 Å3. The local velocity distribution during rapid cooling processes was found to be the Maxwell-Boltzmann type, and the steady-state temperature distribution was obtained within 100 ps.

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