Monitoring of two-dimensional plasma uniformity with electrostatic probing of oxidized wafer surface

Mitsuo Yasaka, Tomoyuki Kitamura, Masayoshi Takeshita, Tanemasa Asano

Research output: Contribution to journalArticle

Abstract

A new method of monitoring the two-dimensional uniformity of plasma for semiconductor processing is proposed. This method measures electric potential distribution of the surface of an oxidized Si wafer exposed to plasma using an electrostatic probe array. The O2 and H2 plasmas generated using a reactive ion etching equipment are tested. It is shown that the measured electric potential distribution agrees well with the distribution of plasma parameters measured using a Langmuir probe. A good correlation between the measured plasma nonuniformity and the degradation of gate SiO2 of metal-oxide-silicon (MOS) structure is demonstrated.

Original languageEnglish
JournalJapanese Journal of Applied Physics, Part 2: Letters
Volume40
Issue number4 A
Publication statusPublished - Apr 1 2001

Fingerprint

Electrostatics
wafers
electrostatics
Plasmas
Monitoring
electrostatic probes
Langmuir probes
Silicon oxides
Reactive ion etching
Electric potential
electric potential
nonuniformity
metal oxides
etching
Semiconductor materials
degradation
Degradation
silicon
Processing
Metals

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy (miscellaneous)
  • Physics and Astronomy(all)

Cite this

Monitoring of two-dimensional plasma uniformity with electrostatic probing of oxidized wafer surface. / Yasaka, Mitsuo; Kitamura, Tomoyuki; Takeshita, Masayoshi; Asano, Tanemasa.

In: Japanese Journal of Applied Physics, Part 2: Letters, Vol. 40, No. 4 A, 01.04.2001.

Research output: Contribution to journalArticle

Yasaka, Mitsuo ; Kitamura, Tomoyuki ; Takeshita, Masayoshi ; Asano, Tanemasa. / Monitoring of two-dimensional plasma uniformity with electrostatic probing of oxidized wafer surface. In: Japanese Journal of Applied Physics, Part 2: Letters. 2001 ; Vol. 40, No. 4 A.
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