Monolayer doping and diameter-dependent electron mobility assessment of nanowires

Alexandra C. Ford, Johnny C. Ho, Yu Lun Chueh, Ali Javey

Research output: Chapter in Book/Report/Conference proceedingConference contribution

4 Citations (Scopus)

Abstract

Sub-5nm ultrashallow junctions in planar and non-planar semiconductors are formed by use of a molecular monolayer doping method and conventional spike annealing. ∼70% of the dopants are found to be electrically active, allowing for a low sheet resistance for a given dopant areal dose, and minimal junction leakage currents (<1 μA/cm2) are observed. This indicates the high-quality of the ultrashallow junctions formed by this monolayer doping method. In addition, temperature-dependent current-voltage (I-V) behavior of individual InAs nanowire field-effect transistors is used to study the field-effect mobility as a function of nanowire radius. The field-effect mobility is observed to decrease with decreasing radius. The low-temperature transport behavior reveals the significant impact of surface roughness scattering on mobility degradation in smaller radius nanowires. The successful demonstration of a monolayer doping technique that does not introduce defects into the substrate, combined with a better understanding of diameter-dependent electron mobility in nanowires, contributes toward the advancement of nanoscale, electronic materials.

Original languageEnglish
Title of host publication2009 IEEE International Conference on Integrated Circuit Design and Technology, ICICDT 2009
Pages223-227
Number of pages5
DOIs
Publication statusPublished - 2009
Externally publishedYes
Event2009 IEEE International Conference on Integrated Circuit Design and Technology, ICICDT 2009 - Austin, TX, United States
Duration: May 18 2009May 20 2009

Publication series

Name2009 IEEE International Conference on Integrated Circuit Design and Technology, ICICDT 2009

Conference

Conference2009 IEEE International Conference on Integrated Circuit Design and Technology, ICICDT 2009
CountryUnited States
CityAustin, TX
Period5/18/095/20/09

All Science Journal Classification (ASJC) codes

  • Hardware and Architecture
  • Electrical and Electronic Engineering

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