Monolithic fabrication of film bulk acoustic resonators above integrated circuit by adhesive-bonding-based film transfer

Abhay Kochhar, Takeshi Matsumura, Guoqiang Zhang, Ramesh Pokharel, Ken Ya Hashimoto, Masayoshi Esashi, Shuji Tanaka

Research output: Chapter in Book/Report/Conference proceedingConference contribution

10 Citations (Scopus)

Abstract

An integration process for the fabrication of thin film bulk acoustic wave resonator (FBAR) above the CMOS IC is proposed. An adhesive-bonding-based film transfer technique is utilized to transfer high resistivity Si film onto a CMOS chip. Benzocyclobutene (BCB) is used as an adhesive film. It is a heat resistive polymer and processes of temperature up to 300°C are allowed on it. The CMOS is protected by BCB and thus is not damaged by plasma and chemical treatments. The transferred Si film offers flat and stable surface which is utilized for the deposition of ruthenium, aluminum nitride & aluminum to fabricate the FBAR structure. Finally, Si underneath the active device area is sacrificially etched to fabricate the air gap type FBAR. In this paper, we present the fabrication process and discuss important issues related to the fabrication.

Original languageEnglish
Title of host publication2012 IEEE International Ultrasonics Symposium, IUS 2012
Pages1047-1050
Number of pages4
DOIs
Publication statusPublished - Dec 1 2012
Event2012 IEEE International Ultrasonics Symposium, IUS 2012 - Dresden, Germany
Duration: Oct 7 2012Oct 10 2012

Publication series

NameIEEE International Ultrasonics Symposium, IUS
ISSN (Print)1948-5719
ISSN (Electronic)1948-5727

Other

Other2012 IEEE International Ultrasonics Symposium, IUS 2012
CountryGermany
CityDresden
Period10/7/1210/10/12

Fingerprint

adhesive bonding
integrated circuits
resonators
fabrication
acoustics
CMOS
aluminum nitrides
adhesives
ruthenium
flat surfaces
chips
aluminum
heat
electrical resistivity
air
polymers
thin films

All Science Journal Classification (ASJC) codes

  • Acoustics and Ultrasonics

Cite this

Kochhar, A., Matsumura, T., Zhang, G., Pokharel, R., Hashimoto, K. Y., Esashi, M., & Tanaka, S. (2012). Monolithic fabrication of film bulk acoustic resonators above integrated circuit by adhesive-bonding-based film transfer. In 2012 IEEE International Ultrasonics Symposium, IUS 2012 (pp. 1047-1050). [6562543] (IEEE International Ultrasonics Symposium, IUS). https://doi.org/10.1109/ULTSYM.2012.0262

Monolithic fabrication of film bulk acoustic resonators above integrated circuit by adhesive-bonding-based film transfer. / Kochhar, Abhay; Matsumura, Takeshi; Zhang, Guoqiang; Pokharel, Ramesh; Hashimoto, Ken Ya; Esashi, Masayoshi; Tanaka, Shuji.

2012 IEEE International Ultrasonics Symposium, IUS 2012. 2012. p. 1047-1050 6562543 (IEEE International Ultrasonics Symposium, IUS).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Kochhar, A, Matsumura, T, Zhang, G, Pokharel, R, Hashimoto, KY, Esashi, M & Tanaka, S 2012, Monolithic fabrication of film bulk acoustic resonators above integrated circuit by adhesive-bonding-based film transfer. in 2012 IEEE International Ultrasonics Symposium, IUS 2012., 6562543, IEEE International Ultrasonics Symposium, IUS, pp. 1047-1050, 2012 IEEE International Ultrasonics Symposium, IUS 2012, Dresden, Germany, 10/7/12. https://doi.org/10.1109/ULTSYM.2012.0262
Kochhar A, Matsumura T, Zhang G, Pokharel R, Hashimoto KY, Esashi M et al. Monolithic fabrication of film bulk acoustic resonators above integrated circuit by adhesive-bonding-based film transfer. In 2012 IEEE International Ultrasonics Symposium, IUS 2012. 2012. p. 1047-1050. 6562543. (IEEE International Ultrasonics Symposium, IUS). https://doi.org/10.1109/ULTSYM.2012.0262
Kochhar, Abhay ; Matsumura, Takeshi ; Zhang, Guoqiang ; Pokharel, Ramesh ; Hashimoto, Ken Ya ; Esashi, Masayoshi ; Tanaka, Shuji. / Monolithic fabrication of film bulk acoustic resonators above integrated circuit by adhesive-bonding-based film transfer. 2012 IEEE International Ultrasonics Symposium, IUS 2012. 2012. pp. 1047-1050 (IEEE International Ultrasonics Symposium, IUS).
@inproceedings{cc4afb91c1bf41de9d61fb510d47bf9f,
title = "Monolithic fabrication of film bulk acoustic resonators above integrated circuit by adhesive-bonding-based film transfer",
abstract = "An integration process for the fabrication of thin film bulk acoustic wave resonator (FBAR) above the CMOS IC is proposed. An adhesive-bonding-based film transfer technique is utilized to transfer high resistivity Si film onto a CMOS chip. Benzocyclobutene (BCB) is used as an adhesive film. It is a heat resistive polymer and processes of temperature up to 300°C are allowed on it. The CMOS is protected by BCB and thus is not damaged by plasma and chemical treatments. The transferred Si film offers flat and stable surface which is utilized for the deposition of ruthenium, aluminum nitride & aluminum to fabricate the FBAR structure. Finally, Si underneath the active device area is sacrificially etched to fabricate the air gap type FBAR. In this paper, we present the fabrication process and discuss important issues related to the fabrication.",
author = "Abhay Kochhar and Takeshi Matsumura and Guoqiang Zhang and Ramesh Pokharel and Hashimoto, {Ken Ya} and Masayoshi Esashi and Shuji Tanaka",
year = "2012",
month = "12",
day = "1",
doi = "10.1109/ULTSYM.2012.0262",
language = "English",
isbn = "9781467345613",
series = "IEEE International Ultrasonics Symposium, IUS",
pages = "1047--1050",
booktitle = "2012 IEEE International Ultrasonics Symposium, IUS 2012",

}

TY - GEN

T1 - Monolithic fabrication of film bulk acoustic resonators above integrated circuit by adhesive-bonding-based film transfer

AU - Kochhar, Abhay

AU - Matsumura, Takeshi

AU - Zhang, Guoqiang

AU - Pokharel, Ramesh

AU - Hashimoto, Ken Ya

AU - Esashi, Masayoshi

AU - Tanaka, Shuji

PY - 2012/12/1

Y1 - 2012/12/1

N2 - An integration process for the fabrication of thin film bulk acoustic wave resonator (FBAR) above the CMOS IC is proposed. An adhesive-bonding-based film transfer technique is utilized to transfer high resistivity Si film onto a CMOS chip. Benzocyclobutene (BCB) is used as an adhesive film. It is a heat resistive polymer and processes of temperature up to 300°C are allowed on it. The CMOS is protected by BCB and thus is not damaged by plasma and chemical treatments. The transferred Si film offers flat and stable surface which is utilized for the deposition of ruthenium, aluminum nitride & aluminum to fabricate the FBAR structure. Finally, Si underneath the active device area is sacrificially etched to fabricate the air gap type FBAR. In this paper, we present the fabrication process and discuss important issues related to the fabrication.

AB - An integration process for the fabrication of thin film bulk acoustic wave resonator (FBAR) above the CMOS IC is proposed. An adhesive-bonding-based film transfer technique is utilized to transfer high resistivity Si film onto a CMOS chip. Benzocyclobutene (BCB) is used as an adhesive film. It is a heat resistive polymer and processes of temperature up to 300°C are allowed on it. The CMOS is protected by BCB and thus is not damaged by plasma and chemical treatments. The transferred Si film offers flat and stable surface which is utilized for the deposition of ruthenium, aluminum nitride & aluminum to fabricate the FBAR structure. Finally, Si underneath the active device area is sacrificially etched to fabricate the air gap type FBAR. In this paper, we present the fabrication process and discuss important issues related to the fabrication.

UR - http://www.scopus.com/inward/record.url?scp=84882414428&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84882414428&partnerID=8YFLogxK

U2 - 10.1109/ULTSYM.2012.0262

DO - 10.1109/ULTSYM.2012.0262

M3 - Conference contribution

AN - SCOPUS:84882414428

SN - 9781467345613

T3 - IEEE International Ultrasonics Symposium, IUS

SP - 1047

EP - 1050

BT - 2012 IEEE International Ultrasonics Symposium, IUS 2012

ER -