Monolithic fabrication of film bulk acoustic resonators above integrated circuit by adhesive-bonding-based film transfer

Abhay Kochhar, Takeshi Matsumura, Guoqiang Zhang, Ramesh Pokharel, Ken Ya Hashimoto, Masayoshi Esashi, Shuji Tanaka

Research output: Chapter in Book/Report/Conference proceedingConference contribution

12 Citations (Scopus)

Abstract

An integration process for the fabrication of thin film bulk acoustic wave resonator (FBAR) above the CMOS IC is proposed. An adhesive-bonding-based film transfer technique is utilized to transfer high resistivity Si film onto a CMOS chip. Benzocyclobutene (BCB) is used as an adhesive film. It is a heat resistive polymer and processes of temperature up to 300°C are allowed on it. The CMOS is protected by BCB and thus is not damaged by plasma and chemical treatments. The transferred Si film offers flat and stable surface which is utilized for the deposition of ruthenium, aluminum nitride & aluminum to fabricate the FBAR structure. Finally, Si underneath the active device area is sacrificially etched to fabricate the air gap type FBAR. In this paper, we present the fabrication process and discuss important issues related to the fabrication.

Original languageEnglish
Title of host publication2012 IEEE International Ultrasonics Symposium, IUS 2012
Pages1047-1050
Number of pages4
DOIs
Publication statusPublished - Dec 1 2012
Event2012 IEEE International Ultrasonics Symposium, IUS 2012 - Dresden, Germany
Duration: Oct 7 2012Oct 10 2012

Publication series

NameIEEE International Ultrasonics Symposium, IUS
ISSN (Print)1948-5719
ISSN (Electronic)1948-5727

Other

Other2012 IEEE International Ultrasonics Symposium, IUS 2012
CountryGermany
CityDresden
Period10/7/1210/10/12

All Science Journal Classification (ASJC) codes

  • Acoustics and Ultrasonics

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    Kochhar, A., Matsumura, T., Zhang, G., Pokharel, R., Hashimoto, K. Y., Esashi, M., & Tanaka, S. (2012). Monolithic fabrication of film bulk acoustic resonators above integrated circuit by adhesive-bonding-based film transfer. In 2012 IEEE International Ultrasonics Symposium, IUS 2012 (pp. 1047-1050). [6562543] (IEEE International Ultrasonics Symposium, IUS). https://doi.org/10.1109/ULTSYM.2012.0262