Monolithically integrated long-wavelength high-speed waveguide p-i-n HEMT receiver

Y. Akahori, Y. Muramoto, Kazutoshi Kato, M. Ikeda, A. Kozen, Y. Itaya

Research output: Contribution to journalArticle

Abstract

The paper presents an evaluation of a high speed side-illuminated receiver OEIC. This receiver consists of a waveguide p-i-n photodiode (WGPD) and an In AlAs/InGaAs HEMT transimpedance amplifier. The monolithic integration was accomplished by C2H6/O2 RIE, together with passivation on the HEMT structure. The photoreceiver had a 3-dB bandwidth of 8.3 GHz and a transimpedance of 100 Ω. This technology will lead to a high performance photonic circuits integrated with high-speed electronic circuits to control and process light signals.

Original languageEnglish
Pages (from-to)49-50
Number of pages2
JournalUnknown Journal
Publication statusPublished - 1994
Externally publishedYes

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All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering
  • Atomic and Molecular Physics, and Optics

Cite this

Akahori, Y., Muramoto, Y., Kato, K., Ikeda, M., Kozen, A., & Itaya, Y. (1994). Monolithically integrated long-wavelength high-speed waveguide p-i-n HEMT receiver. Unknown Journal, 49-50.