The paper presents an evaluation of a high speed side-illuminated receiver OEIC. This receiver consists of a waveguide p-i-n photodiode (WGPD) and an In AlAs/InGaAs HEMT transimpedance amplifier. The monolithic integration was accomplished by C2H6/O2 RIE, together with passivation on the HEMT structure. The photoreceiver had a 3-dB bandwidth of 8.3 GHz and a transimpedance of 100 Ω. This technology will lead to a high performance photonic circuits integrated with high-speed electronic circuits to control and process light signals.
|Number of pages||2|
|Publication status||Published - 1994|
All Science Journal Classification (ASJC) codes
- Electrical and Electronic Engineering
- Atomic and Molecular Physics, and Optics