Monte Carlo simulation of atomic arrangement in InGaN thin film grown by MOVPE

It is known that InGaN LED can emit brilliant light though ∼10⁸ cm^-2 of threading dislocations exists in the active layer. Recently, the origin of defect-insensitive emission was studied [Chichibu et al., Nature Materials 5 (2006) 810] and elucidated that -In-N- zigzag atomic chains act as effective radiative recombination centers. Relationships between growth conditions and atomic arrangements in InGaN thin films were investigated by Monte Carlo simulation in the present study. Estimated density of -In-N- zigzag atomic chains in the grown films are more than 10²⁰ cm^-3 which is large enough compared with the density of non-radiative recombination centers, i.e., <5×10¹⁸ cm^-3, evaluated by Chichibu et al.