Monte Carlo simulation of atomic arrangement in InGaN thin film grown by MOVPE

Yoshihiro Kangawa, Koichi Kakimoto, Tomonori Ito, Akinori Koukitu

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

It is known that InGaN LED can emit brilliant light though ∼108 cm-2 of threading dislocations exists in the active layer. Recently, the origin of defect-insensitive emission was studied [Chichibu et al., Nature Materials 5 (2006) 810] and elucidated that -In-N- zigzag atomic chains act as effective radiative recombination centers. Relationships between growth conditions and atomic arrangements in InGaN thin films were investigated by Monte Carlo simulation in the present study. Estimated density of -In-N- zigzag atomic chains in the grown films are more than 1020 cm-3 which is large enough compared with the density of non-radiative recombination centers, i.e., <5×1018 cm-3, evaluated by Chichibu et al.

Original languageEnglish
Pages (from-to)463-465
Number of pages3
JournalJournal of Crystal Growth
Volume311
Issue number3
DOIs
Publication statusPublished - Jan 15 2009

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Metallorganic vapor phase epitaxy
Light emitting diodes
Thin films
Defects
radiative recombination
thin films
light emitting diodes
simulation
defects
Monte Carlo simulation

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

Cite this

Monte Carlo simulation of atomic arrangement in InGaN thin film grown by MOVPE. / Kangawa, Yoshihiro; Kakimoto, Koichi; Ito, Tomonori; Koukitu, Akinori.

In: Journal of Crystal Growth, Vol. 311, No. 3, 15.01.2009, p. 463-465.

Research output: Contribution to journalArticle

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