Monte Carlo simulation of L11-type ordering due to surface step migration in the epitaxial growth of III--V semiconductor alloys

M. Ishimaru, Syo Matsumura, N. Kuwano, K. Oki

Research output: Contribution to journalArticle

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Abstract

We investigated L11-type ordering due to surface step migration in III-V semiconductor alloys of (A0.5B0.5)IIICV, using an Ising-like crystal growth model. A surface step along the [110] direction (the [110] step), which has a preference for unlike-atom pairs along the step, bears (111) and (111) variants (CuPtB-type) of the four possible L11 variants. On the other hand, a surface step along the [110] direction (the [110] step), which has a preference for like-atom pairs, produces either of the two CuPtB-type variants depending on the direction of the step motion. Antiphase boundaries are inserted parallel to (001) planes in the former case, and (111) or (111) in the latter case. The ordering rate in the case of the [110] step is larger than that for [110] step migration. These results explain well the previous experimental results obtained by transmission electron microscopy.

Original languageEnglish
Pages (from-to)499-502
Number of pages4
JournalJournal of Crystal Growth
Volume128
Issue number1-4
DOIs
Publication statusPublished - Mar 1 1993

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Epitaxial growth
Atoms
simulation
Crystallization
Crystal growth
Transmission electron microscopy
Direction compound
Monte Carlo simulation
III-V semiconductors
antiphase boundaries
bears
atoms
crystal growth
transmission electron microscopy

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

Cite this

Monte Carlo simulation of L11-type ordering due to surface step migration in the epitaxial growth of III--V semiconductor alloys. / Ishimaru, M.; Matsumura, Syo; Kuwano, N.; Oki, K.

In: Journal of Crystal Growth, Vol. 128, No. 1-4, 01.03.1993, p. 499-502.

Research output: Contribution to journalArticle

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