TY - JOUR
T1 - Morphological change of Co-nanodot on SiO2 by thermal treatment
AU - Ueda, Koji
AU - Sadoh, Taizoh
AU - Kenjo, Atsushi
AU - Shoji, Fumiya
AU - Sato, Kaoru
AU - Kurino, Hiroyuki
AU - Koyanagi, Mitsumasa
AU - Miyao, Masanobu
N1 - Funding Information:
The authors would like to thank Mr. M. Shioga of JFE Techno-Research Corporation for SEM observations and Mr. T. Enokida of Fukuryo Semicon Engineering Corporation for TEM observations. A part of this work was supported by the CREST of the Ministry of Education, Culture, Sports, Science and Technology of Japan.
PY - 2006/6/5
Y1 - 2006/6/5
N2 - Morphological changes of Co nanodots on SiO2 layers by thermal treatment have been investigated. Co nanodots were formed by molecular beam deposition of Co on SiO2 layers with substrate temperatures (30-600 °C) and subsequent post-annealing (500-800 °C). For samples deposited at low temperatures (30-280 °C), the diameter and the density of nanodots increased and decreased, respectively, with increasing post-annealing temperature. On the other hand, the diameter and the density of nanodots scarcely changed by post-annealing for samples deposited at high temperatures (430-600 °C). These morphological changes by the post-annealing can be explained on the basis of the stress relaxation in the deposited Co films.
AB - Morphological changes of Co nanodots on SiO2 layers by thermal treatment have been investigated. Co nanodots were formed by molecular beam deposition of Co on SiO2 layers with substrate temperatures (30-600 °C) and subsequent post-annealing (500-800 °C). For samples deposited at low temperatures (30-280 °C), the diameter and the density of nanodots increased and decreased, respectively, with increasing post-annealing temperature. On the other hand, the diameter and the density of nanodots scarcely changed by post-annealing for samples deposited at high temperatures (430-600 °C). These morphological changes by the post-annealing can be explained on the basis of the stress relaxation in the deposited Co films.
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U2 - 10.1016/j.tsf.2005.10.005
DO - 10.1016/j.tsf.2005.10.005
M3 - Article
AN - SCOPUS:33646119192
SN - 0040-6090
VL - 508
SP - 178
EP - 181
JO - Thin Solid Films
JF - Thin Solid Films
IS - 1-2
ER -