Morphological control of nanostructured Ge films in high Ar-gas-pressure plasma sputtering process for Li ion batteries

Junki Hayashi, Kenta Nagai, Yuma Habu, Yumiko Ikebe, Mineo Hiramatsu, Ryota Narishige, Naho Itagaki, Masaharu Shiratani, Yuichi Setsuhara, Giichiro Uchida

Research output: Contribution to journalArticlepeer-review

2 Citations (Scopus)

Abstract

We present a study on morphological control of nanostructured Ge films by the Ar gas pressure in plasma sputtering deposition. In the low Ar-gas-pressure range, aggregated islands of amorphous grains are formed on the film surface, while in the high-pressure range of 500 mTorr monodisperse nano-grains of about 30 nm in size are orderly arranged without aggregation. The film porosity shows a high value of over 10%. We tested the charge/discharge cycle performance of Li-ion batteries with nanostructured Ge films as anodes. The battery cell with an ordered arrangement structure maintained a high capacity of 434 mAh g-1 after 40 charge/discharge cycles, while that with an aggregated structure exhibited a rapid degradation of capacity to 5.08-183 mAh g-1. An ordered arrangement of Ge nano-grains with a high porosity, which is realized in a simple one-step procedure using high Ar-gas-pressure plasma sputtering, is effective for the stable cycling of high-capacity metal anodes.

Original languageEnglish
Article numberSA1002
JournalJapanese journal of applied physics
Volume61
Issue numberSA
DOIs
Publication statusPublished - Jan 2022

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

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