@article{5c5bc5e25686481da08dfc3122739d5e,
title = "Morphology controlling of 〈111〉-3C-SiC films by HMDS flow rate in LCVD",
abstract = " Morphology of 〈111〉-oriented 3C-SiC films was transformed from mosaic to whisker to cauliflower-like with the increased flow rate (f) of hexametyldisilane (HMDS) in the process of laser chemical vapor deposition (LCVD). The SiC whiskers were naturally sharp hexagonal pyramids with average height of 250 nm and an aspect ratio in the range of 5 to 10, with a density of 1.3 × 10 8 mm -2 . The influence mechanism of f on the surface morphology, as well as the growth mechanism of SiC whiskers, was discussed. ",
author = "Qingfang Xu and Rong Tu and Qingyun Sun and Meijun Yang and Qizhong Li and Song Zhang and Lianmeng Zhang and Takashi Goto and Hitoshi Ohmori and Ji Shi and Haiwen Li and Marina Kosinova and Basu Bikramjit",
note = "Funding Information: This work was supported by the Science Challenge Project (No. TZ2016001), and the National Natural Science Foundation of China (No. 51372188, 51521001, 51861145306 and 51872212) and by the 111 Project (B13035). This research was also supported by the International Science and Technology Cooperation Programme of China (2014DFA53090), the Natural Science Foundation of Hubei Province, China (2016CFA006) the Fundamental Research Funds for the Central Universities (WUT: 2017YB004, 2018III016), and the State Key Laboratory of Advanced Technology for Materials Synthesis and Processing (WUT, Grant No. 2019-KF-12).",
year = "2019",
doi = "10.1039/c8ra09509d",
language = "English",
volume = "9",
pages = "2426--2430",
journal = "RSC Advances",
issn = "2046-2069",
publisher = "Royal Society of Chemistry",
number = "5",
}