Morphology controlling of 〈111〉-3C-SiC films by HMDS flow rate in LCVD

Qingfang Xu, Rong Tu, Qingyun Sun, Meijun Yang, Qizhong Li, Song Zhang, Lianmeng Zhang, Takashi Goto, Hitoshi Ohmori, Ji Shi, Haiwen Li, Marina Kosinova, Basu Bikramjit

Research output: Contribution to journalArticle

Abstract

Morphology of 〈111〉-oriented 3C-SiC films was transformed from mosaic to whisker to cauliflower-like with the increased flow rate (f) of hexametyldisilane (HMDS) in the process of laser chemical vapor deposition (LCVD). The SiC whiskers were naturally sharp hexagonal pyramids with average height of 250 nm and an aspect ratio in the range of 5 to 10, with a density of 1.3 × 10 8 mm -2 . The influence mechanism of f on the surface morphology, as well as the growth mechanism of SiC whiskers, was discussed.

Original languageEnglish
Pages (from-to)2426-2430
Number of pages5
JournalRSC Advances
Volume9
Issue number5
DOIs
Publication statusPublished - Jan 1 2019

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All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Chemical Engineering(all)

Cite this

Xu, Q., Tu, R., Sun, Q., Yang, M., Li, Q., Zhang, S., ... Bikramjit, B. (2019). Morphology controlling of 〈111〉-3C-SiC films by HMDS flow rate in LCVD. RSC Advances, 9(5), 2426-2430. https://doi.org/10.1039/c8ra09509d